JPS55143032A - Method of exposure of electron beam - Google Patents

Method of exposure of electron beam

Info

Publication number
JPS55143032A
JPS55143032A JP5105079A JP5105079A JPS55143032A JP S55143032 A JPS55143032 A JP S55143032A JP 5105079 A JP5105079 A JP 5105079A JP 5105079 A JP5105079 A JP 5105079A JP S55143032 A JPS55143032 A JP S55143032A
Authority
JP
Japan
Prior art keywords
electron beam
coordinate axes
pattern
exposure
image element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5105079A
Other languages
Japanese (ja)
Other versions
JPS627690B2 (en
Inventor
Hisashi Mizumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5105079A priority Critical patent/JPS55143032A/en
Publication of JPS55143032A publication Critical patent/JPS55143032A/en
Publication of JPS627690B2 publication Critical patent/JPS627690B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To improve the exposure accuracy, by making the origins of both the coordinate axes X, Y of an exposed material system and an electron beam deflection system coincident with each other when an electron beam is irradiated in accordance with a pattern to be made by exposure and rotative strain is caused by the deviation between the coordinate axes. CONSTITUTION:When an electron beam is irradiated in accordance with a pattern to be made on an exposed material by exposure and rotative strain theta is caused by the deviation between the coordinate axes X, Y of a material system and an electron beam deflection system, following steps are taken. The origins of both the coordinate axes are made coincident with each other first. A maximum image size is determined depending on an allowable range. If the pattern to be made is larger than a maximum image element size, the pattern is divided. Supposing that a point within each image element is expressed as (x0j, y0j) along the coordinate axes X, Y, the image element is translated from (x0j, y0j) to (x2j, y2j) in accordance with formulae shown. Patterning is effected for each image element as the strain theta is retained.
JP5105079A 1979-04-24 1979-04-24 Method of exposure of electron beam Granted JPS55143032A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5105079A JPS55143032A (en) 1979-04-24 1979-04-24 Method of exposure of electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5105079A JPS55143032A (en) 1979-04-24 1979-04-24 Method of exposure of electron beam

Publications (2)

Publication Number Publication Date
JPS55143032A true JPS55143032A (en) 1980-11-08
JPS627690B2 JPS627690B2 (en) 1987-02-18

Family

ID=12875965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5105079A Granted JPS55143032A (en) 1979-04-24 1979-04-24 Method of exposure of electron beam

Country Status (1)

Country Link
JP (1) JPS55143032A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008064957A (en) * 2006-09-06 2008-03-21 Fujifilm Corp Electron beam drawing apparatus and electron beam deviation compensation method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008064957A (en) * 2006-09-06 2008-03-21 Fujifilm Corp Electron beam drawing apparatus and electron beam deviation compensation method

Also Published As

Publication number Publication date
JPS627690B2 (en) 1987-02-18

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