JPS57109332A - Formation of pattern - Google Patents
Formation of patternInfo
- Publication number
- JPS57109332A JPS57109332A JP55185797A JP18579780A JPS57109332A JP S57109332 A JPS57109332 A JP S57109332A JP 55185797 A JP55185797 A JP 55185797A JP 18579780 A JP18579780 A JP 18579780A JP S57109332 A JPS57109332 A JP S57109332A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- ray
- ray mask
- mask
- exposing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
Abstract
PURPOSE:To enable to form the prescribed pattern having a high superposing accuracy by a method wherein the measurements of the pattern group of an X- ray mask are relatively reduced from the measurements of the pattern group which will be formed using other method of exposure, and X-ray exposing method and other exposing method are jointly used. CONSTITUTION:When the prescribed pattern is formed on a substrate 5 cojointly using the X-ray exposing method, wherein a divergent X-ray source 1 and an X- ray mask 3 are combined, and other exposing method with the distance between the divergent X-ray source 1 and the X-ray mask 3 set at D and the interval between the X-ray mask 3 and the substrate 5 is set at g, the pattern 4 of the X-ray mask 3 is formed in advance by reducing (1+g/D) times, or in contrast with this, the pattern to be formed using other method of exposure is formed by magnifying (1+g/D) times.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55185797A JPS57109332A (en) | 1980-12-26 | 1980-12-26 | Formation of pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55185797A JPS57109332A (en) | 1980-12-26 | 1980-12-26 | Formation of pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57109332A true JPS57109332A (en) | 1982-07-07 |
Family
ID=16177051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55185797A Pending JPS57109332A (en) | 1980-12-26 | 1980-12-26 | Formation of pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57109332A (en) |
-
1980
- 1980-12-26 JP JP55185797A patent/JPS57109332A/en active Pending
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