JPS57108970A - Pattern checking method - Google Patents

Pattern checking method

Info

Publication number
JPS57108970A
JPS57108970A JP55184729A JP18472980A JPS57108970A JP S57108970 A JPS57108970 A JP S57108970A JP 55184729 A JP55184729 A JP 55184729A JP 18472980 A JP18472980 A JP 18472980A JP S57108970 A JPS57108970 A JP S57108970A
Authority
JP
Japan
Prior art keywords
pattern
wafer
layer
checked
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55184729A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0214749B2 (OSRAM
Inventor
Takao Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55184729A priority Critical patent/JPS57108970A/ja
Publication of JPS57108970A publication Critical patent/JPS57108970A/ja
Publication of JPH0214749B2 publication Critical patent/JPH0214749B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Image Processing (AREA)
  • Image Analysis (AREA)
JP55184729A 1980-12-25 1980-12-25 Pattern checking method Granted JPS57108970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55184729A JPS57108970A (en) 1980-12-25 1980-12-25 Pattern checking method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55184729A JPS57108970A (en) 1980-12-25 1980-12-25 Pattern checking method

Publications (2)

Publication Number Publication Date
JPS57108970A true JPS57108970A (en) 1982-07-07
JPH0214749B2 JPH0214749B2 (OSRAM) 1990-04-09

Family

ID=16158337

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55184729A Granted JPS57108970A (en) 1980-12-25 1980-12-25 Pattern checking method

Country Status (1)

Country Link
JP (1) JPS57108970A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6654698B2 (en) 2001-06-12 2003-11-25 Applied Materials, Inc. Systems and methods for calibrating integrated inspection tools

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101606841B1 (ko) * 2014-01-02 2016-03-28 윤성노 Ｌｅｄ 전조등

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5322370A (en) * 1976-08-13 1978-03-01 Fujitsu Ltd Inspecting method of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5322370A (en) * 1976-08-13 1978-03-01 Fujitsu Ltd Inspecting method of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6654698B2 (en) 2001-06-12 2003-11-25 Applied Materials, Inc. Systems and methods for calibrating integrated inspection tools

Also Published As

Publication number Publication date
JPH0214749B2 (OSRAM) 1990-04-09

Similar Documents

Publication Publication Date Title
JPS6435916A (en) Formation of fine pattern
US3317320A (en) Duo resist process
JPS5656636A (en) Processing method of fine pattern
US6174644B1 (en) Anti-reflective silicon nitride film using in-situ deposition
US3986876A (en) Method for making a mask having a sloped relief
US4704188A (en) Wet chemical etching of crxsiynz
JPS57108970A (en) Pattern checking method
JPS5633827A (en) Photo etching method including surface treatment of substrate
JPS6043827A (ja) 微細パタ−ンの形成方法
US7368229B2 (en) Composite layer method for minimizing PED effect
JPS57183030A (en) Manufacture of semiconductor device
JPS5569264A (en) Etching method
US3687718A (en) Silica surface treatment
JPS57100428A (en) Method for photomechanical process
US3951659A (en) Method for resist coating of a glass substrate
US6309804B1 (en) Reducing contamination induced scumming, for semiconductor device, by acid treatment
US6372658B1 (en) Reducing contamination induced scumming, for semiconductor device, by ashing
JPS57134934A (en) Manufacture of semiconductor device
JPS5724538A (en) Preparation of semiconductor device
JPS57124439A (en) Manufacture of semiconductor device
JPS56108880A (en) Selectively etching method for silicon oxide film
KR100399889B1 (ko) 반도체소자의감광층패턴형성방법
JPS6459815A (en) Formation of pattern
JPS5623277A (en) Dry etching method
JPS571227A (en) Manufacture of semiconductor device