JPS57106117A - Method for liquid phase epitaxial growth - Google Patents
Method for liquid phase epitaxial growthInfo
- Publication number
- JPS57106117A JPS57106117A JP18318580A JP18318580A JPS57106117A JP S57106117 A JPS57106117 A JP S57106117A JP 18318580 A JP18318580 A JP 18318580A JP 18318580 A JP18318580 A JP 18318580A JP S57106117 A JPS57106117 A JP S57106117A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- inp
- liquid phase
- epitaxial growth
- phase epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18318580A JPS57106117A (en) | 1980-12-24 | 1980-12-24 | Method for liquid phase epitaxial growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18318580A JPS57106117A (en) | 1980-12-24 | 1980-12-24 | Method for liquid phase epitaxial growth |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57106117A true JPS57106117A (en) | 1982-07-01 |
Family
ID=16131252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18318580A Pending JPS57106117A (en) | 1980-12-24 | 1980-12-24 | Method for liquid phase epitaxial growth |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57106117A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5562337A (en) * | 1994-03-01 | 1996-10-08 | Koito Manufacturing Co., Ltd. | Vehicular lamp having improved air vent structure |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52141172A (en) * | 1976-05-20 | 1977-11-25 | Stanley Electric Co Ltd | Continuous liquiddgrowth method |
-
1980
- 1980-12-24 JP JP18318580A patent/JPS57106117A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52141172A (en) * | 1976-05-20 | 1977-11-25 | Stanley Electric Co Ltd | Continuous liquiddgrowth method |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5562337A (en) * | 1994-03-01 | 1996-10-08 | Koito Manufacturing Co., Ltd. | Vehicular lamp having improved air vent structure |
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