JPS57106040A - Prevention of stacking fault - Google Patents
Prevention of stacking faultInfo
- Publication number
- JPS57106040A JPS57106040A JP55182495A JP18249580A JPS57106040A JP S57106040 A JPS57106040 A JP S57106040A JP 55182495 A JP55182495 A JP 55182495A JP 18249580 A JP18249580 A JP 18249580A JP S57106040 A JPS57106040 A JP S57106040A
- Authority
- JP
- Japan
- Prior art keywords
- interstitial
- added
- stacking fault
- c2hcl3
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P95/90—
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55182495A JPS57106040A (en) | 1980-12-22 | 1980-12-22 | Prevention of stacking fault |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55182495A JPS57106040A (en) | 1980-12-22 | 1980-12-22 | Prevention of stacking fault |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57106040A true JPS57106040A (en) | 1982-07-01 |
| JPH0434299B2 JPH0434299B2 (OSRAM) | 1992-06-05 |
Family
ID=16119280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55182495A Granted JPS57106040A (en) | 1980-12-22 | 1980-12-22 | Prevention of stacking fault |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57106040A (OSRAM) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05145027A (ja) * | 1990-12-21 | 1993-06-11 | Siliconix Inc | シリコン集積回路の製造に於ける欠陥形成の制御方法、酸化膜の品質及び欠陥形成の制御方法、二重拡散集積回路デバイスセルと、集積回路mosfetセルの形成方法 |
| US5506178A (en) * | 1992-12-25 | 1996-04-09 | Sony Corporation | Process for forming gate silicon oxide film for MOS transistors |
-
1980
- 1980-12-22 JP JP55182495A patent/JPS57106040A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05145027A (ja) * | 1990-12-21 | 1993-06-11 | Siliconix Inc | シリコン集積回路の製造に於ける欠陥形成の制御方法、酸化膜の品質及び欠陥形成の制御方法、二重拡散集積回路デバイスセルと、集積回路mosfetセルの形成方法 |
| US5506178A (en) * | 1992-12-25 | 1996-04-09 | Sony Corporation | Process for forming gate silicon oxide film for MOS transistors |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0434299B2 (OSRAM) | 1992-06-05 |
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