JPS55153332A - Manufacture of gallium arsenide semiconductor device - Google Patents

Manufacture of gallium arsenide semiconductor device

Info

Publication number
JPS55153332A
JPS55153332A JP6183079A JP6183079A JPS55153332A JP S55153332 A JPS55153332 A JP S55153332A JP 6183079 A JP6183079 A JP 6183079A JP 6183079 A JP6183079 A JP 6183079A JP S55153332 A JPS55153332 A JP S55153332A
Authority
JP
Japan
Prior art keywords
water
remarkably
oxide regions
initial characteristic
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6183079A
Other languages
Japanese (ja)
Inventor
Masahiro Hagio
Shutaro Nanbu
Mutsuaki Shinagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6183079A priority Critical patent/JPS55153332A/en
Publication of JPS55153332A publication Critical patent/JPS55153332A/en
Pending legal-status Critical Current

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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE: To reduce a remarkably the deterioration of the initial characteristic of a gallium arsenide semiconductor device by a method wherein GaAs is washed by boiled water.
CONSTITUTION: When a GaAS device is washed with the demineralized water, etc., oxide regions 6 are produced by washing at the exposed parts of an active layer 2. By this reason the active layer 2 becomes narrow because of the oxide regions 6 and depletion layers expanded in the active layers 2 from the oxide regions 6 deteriorating the initial characteristic. The deterioration is remarkable when metal electrodes like a gate electrode, etc., exist locally. The progress of oxidization by water is remarkably retarded when the quantity of O2 molten in the water is remarkably little. Therefore by boiling the water at lease one time to remove molten O2, a GaAs device having a remarkably superior initial characteristic can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP6183079A 1979-05-18 1979-05-18 Manufacture of gallium arsenide semiconductor device Pending JPS55153332A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6183079A JPS55153332A (en) 1979-05-18 1979-05-18 Manufacture of gallium arsenide semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6183079A JPS55153332A (en) 1979-05-18 1979-05-18 Manufacture of gallium arsenide semiconductor device

Publications (1)

Publication Number Publication Date
JPS55153332A true JPS55153332A (en) 1980-11-29

Family

ID=13182396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6183079A Pending JPS55153332A (en) 1979-05-18 1979-05-18 Manufacture of gallium arsenide semiconductor device

Country Status (1)

Country Link
JP (1) JPS55153332A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01211926A (en) * 1988-02-19 1989-08-25 Kurita Water Ind Ltd Washing device
JPH0563665U (en) * 1992-01-21 1993-08-24 日本電熱計器株式会社 Fracsa
US6471783B1 (en) 1998-05-20 2002-10-29 Tdk Corporation Production method of electronic parts and water treatment apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51140471A (en) * 1975-05-30 1976-12-03 Hitachi Ltd Device for washing semiconductor wafer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51140471A (en) * 1975-05-30 1976-12-03 Hitachi Ltd Device for washing semiconductor wafer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01211926A (en) * 1988-02-19 1989-08-25 Kurita Water Ind Ltd Washing device
JPH0563665U (en) * 1992-01-21 1993-08-24 日本電熱計器株式会社 Fracsa
US6471783B1 (en) 1998-05-20 2002-10-29 Tdk Corporation Production method of electronic parts and water treatment apparatus
US6749183B2 (en) * 1998-05-20 2004-06-15 Tdk Corporation Production method of electronic parts and water treatment apparatus

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