JPH0434299B2 - - Google Patents

Info

Publication number
JPH0434299B2
JPH0434299B2 JP55182495A JP18249580A JPH0434299B2 JP H0434299 B2 JPH0434299 B2 JP H0434299B2 JP 55182495 A JP55182495 A JP 55182495A JP 18249580 A JP18249580 A JP 18249580A JP H0434299 B2 JPH0434299 B2 JP H0434299B2
Authority
JP
Japan
Prior art keywords
trichlorethylene
oxygen
furnace
inert gas
silicon wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55182495A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57106040A (en
Inventor
Takeshi Hatsutori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP55182495A priority Critical patent/JPS57106040A/ja
Publication of JPS57106040A publication Critical patent/JPS57106040A/ja
Publication of JPH0434299B2 publication Critical patent/JPH0434299B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P95/90

Landscapes

  • Formation Of Insulating Films (AREA)
JP55182495A 1980-12-22 1980-12-22 Prevention of stacking fault Granted JPS57106040A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55182495A JPS57106040A (en) 1980-12-22 1980-12-22 Prevention of stacking fault

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55182495A JPS57106040A (en) 1980-12-22 1980-12-22 Prevention of stacking fault

Publications (2)

Publication Number Publication Date
JPS57106040A JPS57106040A (en) 1982-07-01
JPH0434299B2 true JPH0434299B2 (OSRAM) 1992-06-05

Family

ID=16119280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55182495A Granted JPS57106040A (en) 1980-12-22 1980-12-22 Prevention of stacking fault

Country Status (1)

Country Link
JP (1) JPS57106040A (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69131376T2 (de) * 1990-12-21 1999-10-21 Siliconix Inc Verfahren zur Herstellung von doppelt-diffundierten integrierten MOSFET-Zellen
US5506178A (en) * 1992-12-25 1996-04-09 Sony Corporation Process for forming gate silicon oxide film for MOS transistors

Also Published As

Publication number Publication date
JPS57106040A (en) 1982-07-01

Similar Documents

Publication Publication Date Title
Rozgonyi et al. Elimination of Oxidation‐Induced Stacking Faults by Preoxidation Gettering of Silicon Wafers: I. Phosphorus Diffusion‐Induced Misfit Dislocations
CN114093764B (zh) 单晶硅晶片
US5279973A (en) Rapid thermal annealing for semiconductor substrate by using incoherent light
KR19990044245A (ko) 실리콘 단결정 웨이퍼의 열처리 방법과 그 열처리 장치 및 실리콘 단결정 웨이퍼와 그 제조 방법
KR0159420B1 (ko) 반도체 기판의 제조방법
KR100396609B1 (ko) 반도체기판의처리방법
US6509250B2 (en) Method for CMOS well drive in a non-inert ambient
JP7519784B2 (ja) シリコンウェーハの製造方法
JPS618931A (ja) 半導体装置の製造方法
JPH05291097A (ja) シリコン基板およびその製造方法
JPH0434299B2 (OSRAM)
JPH05308076A (ja) シリコンウエーハの酸素析出方法
US6538285B2 (en) Silicon wafer
WO2002052632A1 (en) Method of heat treatment of silicon wafer doped with boron
JPH0845946A (ja) シリコン半導体単結晶基板の熱処理方法及び熱処理装置、半導体装置
JPS6217853B2 (OSRAM)
JP3032565B2 (ja) 半導体装置の製造方法
JPH06349839A (ja) 半導体基板の熱処理方法
KR100545990B1 (ko) 실리콘웨이퍼 내의 금속 불순물 제거 방법
KR20130069935A (ko) 웨이퍼 제조 방법
TWI836802B (zh) 矽晶圓及其製造方法
JPS6344731A (ja) 半導体装置の製造方法
JP2003077926A (ja) シリコンウエーハの熱処理方法
JPS6327846B2 (OSRAM)
JPH11135508A (ja) 半導体装置の製造方法