JPS57104664A - Gasification method for liquid source - Google Patents

Gasification method for liquid source

Info

Publication number
JPS57104664A
JPS57104664A JP17037780A JP17037780A JPS57104664A JP S57104664 A JPS57104664 A JP S57104664A JP 17037780 A JP17037780 A JP 17037780A JP 17037780 A JP17037780 A JP 17037780A JP S57104664 A JPS57104664 A JP S57104664A
Authority
JP
Japan
Prior art keywords
evaporator
rate
pipe
liquid source
evaporation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17037780A
Other languages
Japanese (ja)
Other versions
JPS5817263B2 (en
Inventor
Hideo Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17037780A priority Critical patent/JPS5817263B2/en
Publication of JPS57104664A publication Critical patent/JPS57104664A/en
Publication of JPS5817263B2 publication Critical patent/JPS5817263B2/en
Expired legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To gasify a liquid source under reduced pressure and control the rate of evaporation thereof easily by controlling the concn. of the amt. of the gas in the liquid source to be introduced into a reaction tube from an evaporator with respect to a carrier gas.
CONSTITUTION: A carrier gas is introduced into an evaporator 3 through a lead- in pipe 4, and part thereof is introduced 6 via a lead-in pipe 13 directly into a reaction tube 7. A pressure sensor 11 is provided to this pipe 6, and controls a flow rate controller 12 provided in the pipe 13 according to the pressure in the evaporator 3, thereby changing the amt. of the carrier gas to be introduced into the evaporator 3 and maintaining the inside of the evaporator 3 constant. Next, according to a liquid source 2, a needle valve 10 is so controlled that the conductance of the pipe 6 is kept within the range in which it can be controlled by both of the rate of evaporation and the rate of decompression in the evaporator 3. The sensor 11 and the controller 12 are so set as to maintain the rate of decompression in the evaporator at a prescribed value. Thereafter, the temp. of a thermostatic chamber 1 is controlled in order to change the rate of evaporation within a certain ragne.
COPYRIGHT: (C)1982,JPO&Japio
JP17037780A 1980-12-03 1980-12-03 Method for gasifying liquid sources Expired JPS5817263B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17037780A JPS5817263B2 (en) 1980-12-03 1980-12-03 Method for gasifying liquid sources

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17037780A JPS5817263B2 (en) 1980-12-03 1980-12-03 Method for gasifying liquid sources

Publications (2)

Publication Number Publication Date
JPS57104664A true JPS57104664A (en) 1982-06-29
JPS5817263B2 JPS5817263B2 (en) 1983-04-06

Family

ID=15903801

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17037780A Expired JPS5817263B2 (en) 1980-12-03 1980-12-03 Method for gasifying liquid sources

Country Status (1)

Country Link
JP (1) JPS5817263B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5955022A (en) * 1982-09-24 1984-03-29 Fujitsu Ltd Dry etching
JPS60111417A (en) * 1983-11-22 1985-06-17 Mitsubishi Electric Corp Carburetor utilizing liquid bubbling
JPS6164120A (en) * 1984-09-05 1986-04-02 Toshiba Corp Cvd equipment
JPS61187230A (en) * 1985-02-14 1986-08-20 Sumitomo Electric Ind Ltd Semiconductor manufacturing equipment by vapor growth
JPS6378533A (en) * 1986-09-20 1988-04-08 Fujitsu Ltd Etching device
JPH0196922A (en) * 1987-10-08 1989-04-14 Mitsubishi Rayon Co Ltd Semiconductor manufacture equipment

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5955022A (en) * 1982-09-24 1984-03-29 Fujitsu Ltd Dry etching
JPS60111417A (en) * 1983-11-22 1985-06-17 Mitsubishi Electric Corp Carburetor utilizing liquid bubbling
JPS6164120A (en) * 1984-09-05 1986-04-02 Toshiba Corp Cvd equipment
JPS61187230A (en) * 1985-02-14 1986-08-20 Sumitomo Electric Ind Ltd Semiconductor manufacturing equipment by vapor growth
JPS6378533A (en) * 1986-09-20 1988-04-08 Fujitsu Ltd Etching device
JPH0196922A (en) * 1987-10-08 1989-04-14 Mitsubishi Rayon Co Ltd Semiconductor manufacture equipment

Also Published As

Publication number Publication date
JPS5817263B2 (en) 1983-04-06

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