JPS57104664A - Gasification method for liquid source - Google Patents
Gasification method for liquid sourceInfo
- Publication number
- JPS57104664A JPS57104664A JP17037780A JP17037780A JPS57104664A JP S57104664 A JPS57104664 A JP S57104664A JP 17037780 A JP17037780 A JP 17037780A JP 17037780 A JP17037780 A JP 17037780A JP S57104664 A JPS57104664 A JP S57104664A
- Authority
- JP
- Japan
- Prior art keywords
- evaporator
- rate
- pipe
- liquid source
- evaporation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To gasify a liquid source under reduced pressure and control the rate of evaporation thereof easily by controlling the concn. of the amt. of the gas in the liquid source to be introduced into a reaction tube from an evaporator with respect to a carrier gas.
CONSTITUTION: A carrier gas is introduced into an evaporator 3 through a lead- in pipe 4, and part thereof is introduced 6 via a lead-in pipe 13 directly into a reaction tube 7. A pressure sensor 11 is provided to this pipe 6, and controls a flow rate controller 12 provided in the pipe 13 according to the pressure in the evaporator 3, thereby changing the amt. of the carrier gas to be introduced into the evaporator 3 and maintaining the inside of the evaporator 3 constant. Next, according to a liquid source 2, a needle valve 10 is so controlled that the conductance of the pipe 6 is kept within the range in which it can be controlled by both of the rate of evaporation and the rate of decompression in the evaporator 3. The sensor 11 and the controller 12 are so set as to maintain the rate of decompression in the evaporator at a prescribed value. Thereafter, the temp. of a thermostatic chamber 1 is controlled in order to change the rate of evaporation within a certain ragne.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17037780A JPS5817263B2 (en) | 1980-12-03 | 1980-12-03 | Method for gasifying liquid sources |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17037780A JPS5817263B2 (en) | 1980-12-03 | 1980-12-03 | Method for gasifying liquid sources |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57104664A true JPS57104664A (en) | 1982-06-29 |
JPS5817263B2 JPS5817263B2 (en) | 1983-04-06 |
Family
ID=15903801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17037780A Expired JPS5817263B2 (en) | 1980-12-03 | 1980-12-03 | Method for gasifying liquid sources |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5817263B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5955022A (en) * | 1982-09-24 | 1984-03-29 | Fujitsu Ltd | Dry etching |
JPS60111417A (en) * | 1983-11-22 | 1985-06-17 | Mitsubishi Electric Corp | Carburetor utilizing liquid bubbling |
JPS6164120A (en) * | 1984-09-05 | 1986-04-02 | Toshiba Corp | Cvd equipment |
JPS61187230A (en) * | 1985-02-14 | 1986-08-20 | Sumitomo Electric Ind Ltd | Semiconductor manufacturing equipment by vapor growth |
JPS6378533A (en) * | 1986-09-20 | 1988-04-08 | Fujitsu Ltd | Etching device |
JPH0196922A (en) * | 1987-10-08 | 1989-04-14 | Mitsubishi Rayon Co Ltd | Semiconductor manufacture equipment |
-
1980
- 1980-12-03 JP JP17037780A patent/JPS5817263B2/en not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5955022A (en) * | 1982-09-24 | 1984-03-29 | Fujitsu Ltd | Dry etching |
JPS60111417A (en) * | 1983-11-22 | 1985-06-17 | Mitsubishi Electric Corp | Carburetor utilizing liquid bubbling |
JPS6164120A (en) * | 1984-09-05 | 1986-04-02 | Toshiba Corp | Cvd equipment |
JPS61187230A (en) * | 1985-02-14 | 1986-08-20 | Sumitomo Electric Ind Ltd | Semiconductor manufacturing equipment by vapor growth |
JPS6378533A (en) * | 1986-09-20 | 1988-04-08 | Fujitsu Ltd | Etching device |
JPH0196922A (en) * | 1987-10-08 | 1989-04-14 | Mitsubishi Rayon Co Ltd | Semiconductor manufacture equipment |
Also Published As
Publication number | Publication date |
---|---|
JPS5817263B2 (en) | 1983-04-06 |
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