JPS57103385A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS57103385A
JPS57103385A JP18009080A JP18009080A JPS57103385A JP S57103385 A JPS57103385 A JP S57103385A JP 18009080 A JP18009080 A JP 18009080A JP 18009080 A JP18009080 A JP 18009080A JP S57103385 A JPS57103385 A JP S57103385A
Authority
JP
Japan
Prior art keywords
layer
added
type
activated
clad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18009080A
Other languages
Japanese (ja)
Other versions
JPS6152600B2 (en
Inventor
Toshiro Hayakawa
Toshikimi Takagi
Naotaka Otsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP18009080A priority Critical patent/JPS57103385A/en
Publication of JPS57103385A publication Critical patent/JPS57103385A/en
Publication of JPS6152600B2 publication Critical patent/JPS6152600B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To stabilize the operation of the laser element of double heterostructure of Ga1-xAlxAs and to prolong the lifetime thereof by interposing a buffer layer with no added Te between an activated layer and a clad layer of added Te. CONSTITUTION:An N type GaAs current restricting layer 22 is formed on a P type GaAs substrate 21, a V shaped groove 27 is provided by applying anisotropic etching thereto and a P type Ga0.62Al0.28As activated layer 24 with added Ge is laid on a P type Ga0.45Al0.55As clad layer 23 with Zn added whereby the crystallinity and flatness of the activated layer are improved. Next, an N type Ga0.45Al0.35As clad layer 25 with Te added is grown through the intermediary of an N type Ga0.82Al0.18As buffer layer 30 with Si added, which contains no Te, and the N type clad layer containing defects caused by Te and the activated layer promoting deterioration by re-connection of an electronic positive hole are separated from each other, whereby the deterioration is prevented. Then, an N type GaAs cap layer 26 with Te added and electrodes 1 and 8 are laminated and thereby the device is completed. The thickness of the activated layer 24 and of the buffer layer 30 is made maximum in the center of the V shaped groove and thus the light in the layer 24 is led effectively to the central part of the device.
JP18009080A 1980-12-18 1980-12-18 Semiconductor laser element Granted JPS57103385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18009080A JPS57103385A (en) 1980-12-18 1980-12-18 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18009080A JPS57103385A (en) 1980-12-18 1980-12-18 Semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS57103385A true JPS57103385A (en) 1982-06-26
JPS6152600B2 JPS6152600B2 (en) 1986-11-13

Family

ID=16077264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18009080A Granted JPS57103385A (en) 1980-12-18 1980-12-18 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS57103385A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59208887A (en) * 1983-05-13 1984-11-27 Nec Corp Semiconductor light emitting element
JPS6175584A (en) * 1984-09-20 1986-04-17 Nec Corp Semiconductor laser
JPS6223192A (en) * 1985-07-23 1987-01-31 Mitsubishi Electric Corp Semiconductor laser
JPH08213696A (en) * 1995-10-23 1996-08-20 Sharp Corp Semiconductor laser element

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59208887A (en) * 1983-05-13 1984-11-27 Nec Corp Semiconductor light emitting element
JPS6175584A (en) * 1984-09-20 1986-04-17 Nec Corp Semiconductor laser
JPS6223192A (en) * 1985-07-23 1987-01-31 Mitsubishi Electric Corp Semiconductor laser
JPH0528515B2 (en) * 1985-07-23 1993-04-26 Mitsubishi Electric Corp
JPH08213696A (en) * 1995-10-23 1996-08-20 Sharp Corp Semiconductor laser element

Also Published As

Publication number Publication date
JPS6152600B2 (en) 1986-11-13

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