JPS5710280A - Gan light emitting element - Google Patents

Gan light emitting element

Info

Publication number
JPS5710280A
JPS5710280A JP8398480A JP8398480A JPS5710280A JP S5710280 A JPS5710280 A JP S5710280A JP 8398480 A JP8398480 A JP 8398480A JP 8398480 A JP8398480 A JP 8398480A JP S5710280 A JPS5710280 A JP S5710280A
Authority
JP
Japan
Prior art keywords
film
emitting element
gan
grown
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8398480A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0152910B2 (enrdf_load_stackoverflow
Inventor
Kiyoshi Morimoto
Toshinori Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Futaba Corp
Original Assignee
Futaba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Futaba Corp filed Critical Futaba Corp
Priority to JP8398480A priority Critical patent/JPS5710280A/ja
Priority to DE3124456A priority patent/DE3124456C2/de
Publication of JPS5710280A publication Critical patent/JPS5710280A/ja
Publication of JPH0152910B2 publication Critical patent/JPH0152910B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/012—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials
    • H10H20/0125—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials with a substrate not being Group II-VI materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Led Devices (AREA)
JP8398480A 1980-06-23 1980-06-23 Gan light emitting element Granted JPS5710280A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8398480A JPS5710280A (en) 1980-06-23 1980-06-23 Gan light emitting element
DE3124456A DE3124456C2 (de) 1980-06-23 1981-06-22 Halbleiterbauelement sowie Verfahren zu dessen Herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8398480A JPS5710280A (en) 1980-06-23 1980-06-23 Gan light emitting element

Publications (2)

Publication Number Publication Date
JPS5710280A true JPS5710280A (en) 1982-01-19
JPH0152910B2 JPH0152910B2 (enrdf_load_stackoverflow) 1989-11-10

Family

ID=13817790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8398480A Granted JPS5710280A (en) 1980-06-23 1980-06-23 Gan light emitting element

Country Status (1)

Country Link
JP (1) JPS5710280A (enrdf_load_stackoverflow)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5006908A (en) * 1989-02-13 1991-04-09 Nippon Telegraph And Telephone Corporation Epitaxial Wurtzite growth structure for semiconductor light-emitting device
US5237182A (en) * 1990-11-29 1993-08-17 Sharp Kabushiki Kaisha Electroluminescent device of compound semiconductor with buffer layer
GB2320365A (en) * 1996-11-29 1998-06-17 Matsushita Electronics Corp Method of making a gallium nitride crystal for a semiconductor device
US5889295A (en) * 1996-02-26 1999-03-30 Kabushiki Kaisha Toshiba Semiconductor device
US6146916A (en) * 1997-12-02 2000-11-14 Murata Manufacturing Co., Ltd. Method for forming a GaN-based semiconductor light emitting device
US6437363B1 (en) 1998-09-25 2002-08-20 Murata Manufacturing Co. Ltd. Semiconductor photonic device
US6830949B2 (en) 2000-04-21 2004-12-14 Toyoda Gosei Co., Ltd. Method for producing group-III nitride compound semiconductor device
US7172909B2 (en) 2003-07-04 2007-02-06 Epistar Corporation Light emitting diode having an adhesive layer and a reflective layer and manufacturing method thereof
JP2009111100A (ja) * 2007-10-29 2009-05-21 Mitsubishi Chemicals Corp 集積型発光源およびその製造方法
JP2009111101A (ja) * 2007-10-29 2009-05-21 Mitsubishi Chemicals Corp 集積型発光源およびその製造方法
JP2009111098A (ja) * 2007-10-29 2009-05-21 Mitsubishi Chemicals Corp 集積型発光源およびその製造方法
JP2009111099A (ja) * 2007-10-29 2009-05-21 Mitsubishi Chemicals Corp 集積型発光源およびその製造方法
EP1712662A4 (en) * 2003-06-30 2009-12-02 Kenichiro Miyahara SUBSTRATE FOR THE MANUFACTURE OF THIN FILMS, SUBSTRATE FOR THIN FILMS AND LIGHT EMITTING ELEMENT
US7928455B2 (en) 2002-07-15 2011-04-19 Epistar Corporation Semiconductor light-emitting device and method for forming the same
US8860065B2 (en) 2005-01-18 2014-10-14 Epistar Corporation Optoelectronic semiconductor device
US8999736B2 (en) 2003-07-04 2015-04-07 Epistar Corporation Optoelectronic system
JPWO2022210401A1 (enrdf_load_stackoverflow) * 2021-03-31 2022-10-06
WO2023032583A1 (ja) * 2021-09-03 2023-03-09 株式会社ジャパンディスプレイ アモルファス基板上の窒化ガリウム系半導体デバイス
JPWO2023058308A1 (enrdf_load_stackoverflow) * 2021-10-05 2023-04-13
JPWO2023145215A1 (enrdf_load_stackoverflow) * 2022-01-28 2023-08-03
WO2024048393A1 (ja) * 2022-09-01 2024-03-07 株式会社ジャパンディスプレイ 積層構造体、積層構造体の製造方法、及び半導体デバイス

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994003931A1 (en) * 1992-08-07 1994-02-17 Asahi Kasei Kogyo Kabushiki Kaisha Nitride based semiconductor device and manufacture thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919783A (enrdf_load_stackoverflow) * 1972-02-26 1974-02-21
JPS5228634A (en) * 1975-08-29 1977-03-03 Hitachi Ltd Wire breaking detection system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919783A (enrdf_load_stackoverflow) * 1972-02-26 1974-02-21
JPS5228634A (en) * 1975-08-29 1977-03-03 Hitachi Ltd Wire breaking detection system

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5006908A (en) * 1989-02-13 1991-04-09 Nippon Telegraph And Telephone Corporation Epitaxial Wurtzite growth structure for semiconductor light-emitting device
US5237182A (en) * 1990-11-29 1993-08-17 Sharp Kabushiki Kaisha Electroluminescent device of compound semiconductor with buffer layer
US5889295A (en) * 1996-02-26 1999-03-30 Kabushiki Kaisha Toshiba Semiconductor device
GB2320365A (en) * 1996-11-29 1998-06-17 Matsushita Electronics Corp Method of making a gallium nitride crystal for a semiconductor device
US6030886A (en) * 1996-11-29 2000-02-29 Matsushita Electronics Corporation Growth of GaN on a substrate using a ZnO buffer layer
GB2320365B (en) * 1996-11-29 2002-01-02 Matsushita Electronics Corp Semiconductor device and its manufacturing method
US6146916A (en) * 1997-12-02 2000-11-14 Murata Manufacturing Co., Ltd. Method for forming a GaN-based semiconductor light emitting device
US6437363B1 (en) 1998-09-25 2002-08-20 Murata Manufacturing Co. Ltd. Semiconductor photonic device
US6830949B2 (en) 2000-04-21 2004-12-14 Toyoda Gosei Co., Ltd. Method for producing group-III nitride compound semiconductor device
US8853722B2 (en) 2002-07-15 2014-10-07 Epistar Corporation Semiconductor light-emitting device and method for forming the same
US7928455B2 (en) 2002-07-15 2011-04-19 Epistar Corporation Semiconductor light-emitting device and method for forming the same
EP1712662A4 (en) * 2003-06-30 2009-12-02 Kenichiro Miyahara SUBSTRATE FOR THE MANUFACTURE OF THIN FILMS, SUBSTRATE FOR THIN FILMS AND LIGHT EMITTING ELEMENT
US7172909B2 (en) 2003-07-04 2007-02-06 Epistar Corporation Light emitting diode having an adhesive layer and a reflective layer and manufacturing method thereof
US9748449B2 (en) 2003-07-04 2017-08-29 Epistar Corporation Optoelectronic system
US8999736B2 (en) 2003-07-04 2015-04-07 Epistar Corporation Optoelectronic system
US8860065B2 (en) 2005-01-18 2014-10-14 Epistar Corporation Optoelectronic semiconductor device
US11245060B2 (en) 2007-08-27 2022-02-08 Epistar Corporation Optoelectronic semiconductor device
JP2009111100A (ja) * 2007-10-29 2009-05-21 Mitsubishi Chemicals Corp 集積型発光源およびその製造方法
JP2009111101A (ja) * 2007-10-29 2009-05-21 Mitsubishi Chemicals Corp 集積型発光源およびその製造方法
JP2009111099A (ja) * 2007-10-29 2009-05-21 Mitsubishi Chemicals Corp 集積型発光源およびその製造方法
JP2009111098A (ja) * 2007-10-29 2009-05-21 Mitsubishi Chemicals Corp 集積型発光源およびその製造方法
JPWO2022210401A1 (enrdf_load_stackoverflow) * 2021-03-31 2022-10-06
WO2022210401A1 (ja) * 2021-03-31 2022-10-06 株式会社ジャパンディスプレイ 積層構造体
WO2023032583A1 (ja) * 2021-09-03 2023-03-09 株式会社ジャパンディスプレイ アモルファス基板上の窒化ガリウム系半導体デバイス
JPWO2023032583A1 (enrdf_load_stackoverflow) * 2021-09-03 2023-03-09
JPWO2023058308A1 (enrdf_load_stackoverflow) * 2021-10-05 2023-04-13
JPWO2023145215A1 (enrdf_load_stackoverflow) * 2022-01-28 2023-08-03
WO2024048393A1 (ja) * 2022-09-01 2024-03-07 株式会社ジャパンディスプレイ 積層構造体、積層構造体の製造方法、及び半導体デバイス

Also Published As

Publication number Publication date
JPH0152910B2 (enrdf_load_stackoverflow) 1989-11-10

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