JPS5710233A - Electron beam exposing method - Google Patents
Electron beam exposing methodInfo
- Publication number
- JPS5710233A JPS5710233A JP8478880A JP8478880A JPS5710233A JP S5710233 A JPS5710233 A JP S5710233A JP 8478880 A JP8478880 A JP 8478880A JP 8478880 A JP8478880 A JP 8478880A JP S5710233 A JPS5710233 A JP S5710233A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- emitted
- time
- positions
- respective positions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010894 electron beam technology Methods 0.000 title abstract 7
- 238000000034 method Methods 0.000 title 1
- 230000035945 sensitivity Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000004132 cross linking Methods 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8478880A JPS5710233A (en) | 1980-06-23 | 1980-06-23 | Electron beam exposing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8478880A JPS5710233A (en) | 1980-06-23 | 1980-06-23 | Electron beam exposing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5710233A true JPS5710233A (en) | 1982-01-19 |
JPS6148772B2 JPS6148772B2 (enrdf_load_stackoverflow) | 1986-10-25 |
Family
ID=13840429
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8478880A Granted JPS5710233A (en) | 1980-06-23 | 1980-06-23 | Electron beam exposing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5710233A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60196941A (ja) * | 1984-02-29 | 1985-10-05 | Fujitsu Ltd | 電子線露光方法 |
JPS6114720A (ja) * | 1984-06-29 | 1986-01-22 | Fujitsu Ltd | 電子ビ−ム露光方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0336677U (enrdf_load_stackoverflow) * | 1989-08-17 | 1991-04-10 |
-
1980
- 1980-06-23 JP JP8478880A patent/JPS5710233A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60196941A (ja) * | 1984-02-29 | 1985-10-05 | Fujitsu Ltd | 電子線露光方法 |
JPS6114720A (ja) * | 1984-06-29 | 1986-01-22 | Fujitsu Ltd | 電子ビ−ム露光方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6148772B2 (enrdf_load_stackoverflow) | 1986-10-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4357364A (en) | High rate resist polymerization method | |
JPS5710233A (en) | Electron beam exposing method | |
ATE49678T1 (de) | Photoresistbelichtungsverfahren und geraet unter verwendung eines elektronenstrahls, dessen energie und ladung gesteuert werden. | |
US4194123A (en) | Lithographic apparatus | |
GB2180669A (en) | An electron emissive mask for an electron beam image projector, its manufacture, and the manufacture of a solid state device using such a mask | |
US3855023A (en) | Manufacture of masks | |
KR900001715B1 (ko) | 전자선 노광방법(電子線 露光方法) | |
JPS5712522A (en) | Forming method of pattern | |
JPS57170526A (en) | Exposing method and device for charged beam | |
JPH07297098A (ja) | パターン形成方法および電子線描画装置 | |
JPS55140228A (en) | Method for formation of pattern | |
JPS52117077A (en) | Electron beam-exposing method | |
JPS5721819A (en) | Forming method for pattern | |
JPS56125833A (en) | Exposing method for electron beam | |
JPS5390766A (en) | Exposure method | |
JPS5720433A (en) | X-ray exposure transfer mask and transferring method therefor | |
JPS5528252A (en) | Method of manufacturing control electrode of flat plate- like picture display unit | |
JPS5772327A (en) | Formation of resist pattern | |
JPS5553860A (en) | Pattern signal generator | |
JPS57113222A (en) | Pattern forming method by x-ray exposure | |
JPS6445038A (en) | Manufacture of electron tube cathode | |
JPS5487479A (en) | Photo mask blank substrate | |
JPS5754320A (ja) | Denshibiimurokohoho | |
JPS53114676A (en) | Electron beam exposure method | |
JPS5764934A (en) | Manufacture of semiconductor device |