JPS57102054A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS57102054A
JPS57102054A JP55179449A JP17944980A JPS57102054A JP S57102054 A JPS57102054 A JP S57102054A JP 55179449 A JP55179449 A JP 55179449A JP 17944980 A JP17944980 A JP 17944980A JP S57102054 A JPS57102054 A JP S57102054A
Authority
JP
Japan
Prior art keywords
layer
type
multilayer wiring
circuit device
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55179449A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6332259B2 (enExample
Inventor
Tsutomu Fujita
Toyoki Takemoto
Tadanaka Yoneda
Haruyasu Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55179449A priority Critical patent/JPS57102054A/ja
Priority to DE8181110459T priority patent/DE3174824D1/de
Priority to EP81110459A priority patent/EP0054303B1/en
Publication of JPS57102054A publication Critical patent/JPS57102054A/ja
Publication of JPS6332259B2 publication Critical patent/JPS6332259B2/ja
Priority to US07/965,967 priority patent/US5661066A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures

Landscapes

  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Integrated Circuits (AREA)
JP55179449A 1980-12-17 1980-12-17 Semiconductor integrated circuit device Granted JPS57102054A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP55179449A JPS57102054A (en) 1980-12-17 1980-12-17 Semiconductor integrated circuit device
DE8181110459T DE3174824D1 (en) 1980-12-17 1981-12-15 Semiconductor integrated circuit
EP81110459A EP0054303B1 (en) 1980-12-17 1981-12-15 Semiconductor integrated circuit
US07/965,967 US5661066A (en) 1980-12-17 1991-04-02 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55179449A JPS57102054A (en) 1980-12-17 1980-12-17 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS57102054A true JPS57102054A (en) 1982-06-24
JPS6332259B2 JPS6332259B2 (enExample) 1988-06-29

Family

ID=16066045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55179449A Granted JPS57102054A (en) 1980-12-17 1980-12-17 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57102054A (enExample)

Also Published As

Publication number Publication date
JPS6332259B2 (enExample) 1988-06-29

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