JPS57100761A - Semiconductor light sensitive device - Google Patents

Semiconductor light sensitive device

Info

Publication number
JPS57100761A
JPS57100761A JP55177830A JP17783080A JPS57100761A JP S57100761 A JPS57100761 A JP S57100761A JP 55177830 A JP55177830 A JP 55177830A JP 17783080 A JP17783080 A JP 17783080A JP S57100761 A JPS57100761 A JP S57100761A
Authority
JP
Japan
Prior art keywords
depth
layers
substrate
semiconductor light
light sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55177830A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6322474B2 (enrdf_load_stackoverflow
Inventor
Yoshihiro Arimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55177830A priority Critical patent/JPS57100761A/ja
Publication of JPS57100761A publication Critical patent/JPS57100761A/ja
Publication of JPS6322474B2 publication Critical patent/JPS6322474B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/20—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in or on a single semiconductor substrate, the photovoltaic cells having planar junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP55177830A 1980-12-16 1980-12-16 Semiconductor light sensitive device Granted JPS57100761A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55177830A JPS57100761A (en) 1980-12-16 1980-12-16 Semiconductor light sensitive device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55177830A JPS57100761A (en) 1980-12-16 1980-12-16 Semiconductor light sensitive device

Publications (2)

Publication Number Publication Date
JPS57100761A true JPS57100761A (en) 1982-06-23
JPS6322474B2 JPS6322474B2 (enrdf_load_stackoverflow) 1988-05-12

Family

ID=16037848

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55177830A Granted JPS57100761A (en) 1980-12-16 1980-12-16 Semiconductor light sensitive device

Country Status (1)

Country Link
JP (1) JPS57100761A (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922360A (ja) * 1982-07-28 1984-02-04 Matsushita Electric Works Ltd 光入力モス型トランジスタ
JPS5936263U (ja) * 1982-08-30 1984-03-07 日本電気株式会社 半導体装置
JPS6216568A (ja) * 1985-07-15 1987-01-24 Sharp Corp 回路内蔵受光素子
US5360987A (en) * 1993-11-17 1994-11-01 At&T Bell Laboratories Semiconductor photodiode device with isolation region
US6228750B1 (en) 1994-12-30 2001-05-08 Lucent Technologies Method of doping a semiconductor surface
US6716670B1 (en) 2002-01-09 2004-04-06 Bridge Semiconductor Corporation Method of forming a three-dimensional stacked semiconductor package device
US6936495B1 (en) 2002-01-09 2005-08-30 Bridge Semiconductor Corporation Method of making an optoelectronic semiconductor package device
US6987034B1 (en) 2002-01-09 2006-01-17 Bridge Semiconductor Corporation Method of making a semiconductor package device that includes singulating and trimming a lead
US7190060B1 (en) 2002-01-09 2007-03-13 Bridge Semiconductor Corporation Three-dimensional stacked semiconductor package device with bent and flat leads and method of making same
JP2012129349A (ja) * 2010-12-15 2012-07-05 Toyo Univ 半導体装置
JP2016157956A (ja) * 2008-08-29 2016-09-01 タウ−メトリックス インコーポレイテッドＴａｕ−Ｍｅｔｒｉｘ， Ｉｎｃ． 半導体基板用集積フォトダイオード

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922360A (ja) * 1982-07-28 1984-02-04 Matsushita Electric Works Ltd 光入力モス型トランジスタ
JPS5936263U (ja) * 1982-08-30 1984-03-07 日本電気株式会社 半導体装置
JPS6216568A (ja) * 1985-07-15 1987-01-24 Sharp Corp 回路内蔵受光素子
US5360987A (en) * 1993-11-17 1994-11-01 At&T Bell Laboratories Semiconductor photodiode device with isolation region
US6228750B1 (en) 1994-12-30 2001-05-08 Lucent Technologies Method of doping a semiconductor surface
US6891276B1 (en) 2002-01-09 2005-05-10 Bridge Semiconductor Corporation Semiconductor package device
US6774659B1 (en) 2002-01-09 2004-08-10 Bridge Semiconductor Corporation Method of testing a semiconductor package device
US6803651B1 (en) * 2002-01-09 2004-10-12 Bridge Semiconductor Corporation Optoelectronic semiconductor package device
US6716670B1 (en) 2002-01-09 2004-04-06 Bridge Semiconductor Corporation Method of forming a three-dimensional stacked semiconductor package device
US6908794B1 (en) 2002-01-09 2005-06-21 Bridge Semiconductor Corporation Method of making a semiconductor package device that includes a conductive trace with recessed and non-recessed portions
US6936495B1 (en) 2002-01-09 2005-08-30 Bridge Semiconductor Corporation Method of making an optoelectronic semiconductor package device
US6987034B1 (en) 2002-01-09 2006-01-17 Bridge Semiconductor Corporation Method of making a semiconductor package device that includes singulating and trimming a lead
US6989584B1 (en) 2002-01-09 2006-01-24 Bridge Semiconductor Corporation Semiconductor package device that includes a conductive trace with a routing line, a terminal and a lead
US6989295B1 (en) 2002-01-09 2006-01-24 Bridge Semiconductor Corporation Method of making a semiconductor package device that includes an insulative housing with first and second housing portions
US7009309B1 (en) 2002-01-09 2006-03-07 Bridge Semiconductor Corporation Semiconductor package device that includes an insulative housing with a protruding peripheral portion
US7190060B1 (en) 2002-01-09 2007-03-13 Bridge Semiconductor Corporation Three-dimensional stacked semiconductor package device with bent and flat leads and method of making same
JP2016157956A (ja) * 2008-08-29 2016-09-01 タウ−メトリックス インコーポレイテッドＴａｕ−Ｍｅｔｒｉｘ， Ｉｎｃ． 半導体基板用集積フォトダイオード
JP2012129349A (ja) * 2010-12-15 2012-07-05 Toyo Univ 半導体装置

Also Published As

Publication number Publication date
JPS6322474B2 (enrdf_load_stackoverflow) 1988-05-12

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