JPS5696079A - Formation of metallic mask for ion etching - Google Patents

Formation of metallic mask for ion etching

Info

Publication number
JPS5696079A
JPS5696079A JP17100479A JP17100479A JPS5696079A JP S5696079 A JPS5696079 A JP S5696079A JP 17100479 A JP17100479 A JP 17100479A JP 17100479 A JP17100479 A JP 17100479A JP S5696079 A JPS5696079 A JP S5696079A
Authority
JP
Japan
Prior art keywords
layer
worked
coating
resist pattern
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17100479A
Other languages
Japanese (ja)
Inventor
Tomio Kume
Shoichi Tsutsumi
Seiji Yoneoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17100479A priority Critical patent/JPS5696079A/en
Publication of JPS5696079A publication Critical patent/JPS5696079A/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Magnetic Heads (AREA)

Abstract

PURPOSE: To form easily titled mask excellent in peeling resistance, by forming Cu layer, Ti layer successively on the adhered metallic layer formed on the material to be worked, and by forming resist pattern on the Ti layer, then by etching the Ti layer.
CONSTITUTION: Adhered layer 2 contg. Al or Cr is formed on the material 1 to be worked. Then Cu coating 3, Ti coating 4 are formed successively. After formation of a photoresist layer by painting photoresist agent on the Ti coating 4, the material 1 to be worked is treated by well known processes including exposure, development to form resist pattern 5, it is then immersed into an etching fluid contg. hydrofluoric acid so as to etch the Ti layer 4 along the resist pattern 5. The Cu coating 3 remains without being etched and protects the adhered layer 2 and the material 1 to be worked. When the pattern 5 is removed, metallic mask 4 for ion etching is formed.
COPYRIGHT: (C)1981,JPO&Japio
JP17100479A 1979-12-28 1979-12-28 Formation of metallic mask for ion etching Pending JPS5696079A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17100479A JPS5696079A (en) 1979-12-28 1979-12-28 Formation of metallic mask for ion etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17100479A JPS5696079A (en) 1979-12-28 1979-12-28 Formation of metallic mask for ion etching

Publications (1)

Publication Number Publication Date
JPS5696079A true JPS5696079A (en) 1981-08-03

Family

ID=15915313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17100479A Pending JPS5696079A (en) 1979-12-28 1979-12-28 Formation of metallic mask for ion etching

Country Status (1)

Country Link
JP (1) JPS5696079A (en)

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