JPS5696080A - Formation of metallic mask for ion etching - Google Patents

Formation of metallic mask for ion etching

Info

Publication number
JPS5696080A
JPS5696080A JP17100679A JP17100679A JPS5696080A JP S5696080 A JPS5696080 A JP S5696080A JP 17100679 A JP17100679 A JP 17100679A JP 17100679 A JP17100679 A JP 17100679A JP S5696080 A JPS5696080 A JP S5696080A
Authority
JP
Japan
Prior art keywords
pattern
alloy
layer
ion etching
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17100679A
Other languages
Japanese (ja)
Other versions
JPS627273B2 (en
Inventor
Tomio Kume
Shoichi Tsutsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17100679A priority Critical patent/JPS5696080A/en
Publication of JPS5696080A publication Critical patent/JPS5696080A/en
Publication of JPS627273B2 publication Critical patent/JPS627273B2/ja
Granted legal-status Critical Current

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Abstract

PURPOSE: To form easily titled mask excellent in peeling resistance, by forming adhered layer of Al (or its alloy) or Cr, Ni-Fe alloy layer successively on the material to be worked made of metallic oxide, then by forming Ti coating of desired shape.
CONSTITUTION: The material 1 to be worked made of photoceram, barium titanate, ferrite etc. is coated with an adhered layer 3 made of Al, Al alloy, or Cr, then it is coated with a protecting layer 3 made of Ni-Fe alloy. The layer 3 is painted with photoresist agent, and is treated by well known processes including exposure, development to form a resist pattern 4. Ti coatings 5, 5a which are a little thinner than the pattern 4 are formed on the pattern 4. The Ti coatings 5 and 5a are discontinuous, hence the removal of the pattern 4 by dissolution removes the Ti coating 5 together with pattern 4, hereby Ti mask 5a for ion etching is formed.
COPYRIGHT: (C)1981,JPO&Japio
JP17100679A 1979-12-28 1979-12-28 Formation of metallic mask for ion etching Granted JPS5696080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17100679A JPS5696080A (en) 1979-12-28 1979-12-28 Formation of metallic mask for ion etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17100679A JPS5696080A (en) 1979-12-28 1979-12-28 Formation of metallic mask for ion etching

Publications (2)

Publication Number Publication Date
JPS5696080A true JPS5696080A (en) 1981-08-03
JPS627273B2 JPS627273B2 (en) 1987-02-16

Family

ID=15915348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17100679A Granted JPS5696080A (en) 1979-12-28 1979-12-28 Formation of metallic mask for ion etching

Country Status (1)

Country Link
JP (1) JPS5696080A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0583889A2 (en) * 1992-07-22 1994-02-23 Ngk Insulators, Ltd. Method of etching sendust and method of pattern-etching sendust and chromium films

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0583889A2 (en) * 1992-07-22 1994-02-23 Ngk Insulators, Ltd. Method of etching sendust and method of pattern-etching sendust and chromium films
EP0583889A3 (en) * 1992-07-22 1994-10-12 Ngk Insulators Ltd Method of etching sendust and method of pattern-etching sendust and chromium films.

Also Published As

Publication number Publication date
JPS627273B2 (en) 1987-02-16

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