JPS56947B2 - - Google Patents
Info
- Publication number
- JPS56947B2 JPS56947B2 JP8710376A JP8710376A JPS56947B2 JP S56947 B2 JPS56947 B2 JP S56947B2 JP 8710376 A JP8710376 A JP 8710376A JP 8710376 A JP8710376 A JP 8710376A JP S56947 B2 JPS56947 B2 JP S56947B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2532594A DE2532594B2 (de) | 1975-07-21 | 1975-07-21 | Halbleiterspeicher |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5212584A JPS5212584A (en) | 1977-01-31 |
| JPS56947B2 true JPS56947B2 (sk) | 1981-01-10 |
Family
ID=5952074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51087103A Granted JPS5212584A (en) | 1975-07-21 | 1976-07-21 | Semiconductor memory |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5212584A (sk) |
| DE (1) | DE2532594B2 (sk) |
| FR (1) | FR2319182A1 (sk) |
| GB (1) | GB1516005A (sk) |
| NL (1) | NL7607984A (sk) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5921168U (ja) * | 1982-07-30 | 1984-02-08 | 三菱電機株式会社 | メカニカル・シ−ル |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5279679A (en) * | 1975-12-26 | 1977-07-04 | Toshiba Corp | Semiconductor memory device |
| JPS6034270B2 (ja) * | 1976-01-12 | 1985-08-07 | テキサス・インスツルメンツ・インコ−ポレイテツド | 半導体メモリ装置およびその製造方法 |
| NL176415C (nl) * | 1976-07-05 | 1985-04-01 | Hitachi Ltd | Halfgeleidergeheugeninrichting omvattende een matrix van halfgeleidergeheugencellen, die bestaan uit een veldeffekttransistor en een opslagcapaciteit. |
| IT1089299B (it) * | 1977-01-26 | 1985-06-18 | Mostek Corp | Procedimento per fabbricare un dispositivo semiconduttore |
| JPS54159887A (en) * | 1978-06-08 | 1979-12-18 | Nec Corp | Semiconductor memory device |
| DE2905506A1 (de) * | 1979-02-14 | 1980-09-04 | Bosch Gmbh Robert | Zuendbeginnsensor, insbesondere bei brennkraftmaschinen |
| DE2935291A1 (de) * | 1979-08-31 | 1981-03-19 | Siemens AG, 1000 Berlin und 8000 München | Monolithische statische speicherzelle |
| DE2935254A1 (de) * | 1979-08-31 | 1981-04-02 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung einer monolithischen statischen speicherzelle |
| DE3177173D1 (de) * | 1980-01-25 | 1990-05-23 | Toshiba Kawasaki Kk | Halbleiterspeichervorrichtung. |
| JPS57210665A (en) * | 1981-06-19 | 1982-12-24 | Mitsubishi Electric Corp | Semiconductor memory device |
| DE3138295A1 (de) * | 1981-09-25 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Zweidimensionaler halbleiter-bildsensor mit hoher packungsdichte |
| DE3138314A1 (de) * | 1981-09-25 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Zweidimensionaler halbleiter-bildsensor hoher packungsdichte mit fotoleiterschicht |
| JP2533070Y2 (ja) * | 1989-06-14 | 1997-04-16 | 株式会社 テーアンテー | スライドスイッチ |
-
1975
- 1975-07-21 DE DE2532594A patent/DE2532594B2/de not_active Withdrawn
-
1976
- 1976-06-10 GB GB22532/76A patent/GB1516005A/en not_active Expired
- 1976-07-01 FR FR7620111A patent/FR2319182A1/fr active Granted
- 1976-07-19 NL NL7607984A patent/NL7607984A/xx not_active Application Discontinuation
- 1976-07-21 JP JP51087103A patent/JPS5212584A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5921168U (ja) * | 1982-07-30 | 1984-02-08 | 三菱電機株式会社 | メカニカル・シ−ル |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5212584A (en) | 1977-01-31 |
| DE2532594A1 (de) | 1977-02-03 |
| NL7607984A (nl) | 1977-01-25 |
| FR2319182A1 (fr) | 1977-02-18 |
| FR2319182B3 (sk) | 1979-03-23 |
| DE2532594B2 (de) | 1980-05-22 |
| GB1516005A (en) | 1978-06-28 |