JPS5693365A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5693365A
JPS5693365A JP16961179A JP16961179A JPS5693365A JP S5693365 A JPS5693365 A JP S5693365A JP 16961179 A JP16961179 A JP 16961179A JP 16961179 A JP16961179 A JP 16961179A JP S5693365 A JPS5693365 A JP S5693365A
Authority
JP
Japan
Prior art keywords
pattern
chip
type
circuit
electrostatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16961179A
Other languages
Japanese (ja)
Inventor
Umeo Oshio
Tetsuo Ide
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16961179A priority Critical patent/JPS5693365A/en
Publication of JPS5693365A publication Critical patent/JPS5693365A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To effectively prevent an electrostatic puncture of an internal element by a method wherein a low resistance layer comprising an N type layer is mounted on an IC chip itself on which the internal element is formed, and used as an electrostatic puncture prevention circuit. CONSTITUTION:The electrostatic puncture prevention circuit 3 is formed situated within the same chip between an input/output circuit 2 constituting the IC chip and an input/output terminal 1. That is, an N type layer is grown on a P type semiconductor substrate provided with an N type region to made island-shape, and two wirings Pa and Pb are formed in crossing by a cross-under method through an SiO2 protective film 5 in the section where the N type low resistance layer made the island-shape is used as the electrostatic puncture prevention region. Namely, a wiring pattern Pd on one side is located on the chip and the wiring pattern Pb formed around the pattern Pd is interrupted at ends Pb1 and Pb2 respectively and arranged passed under the pattern Pb. Thus, the pattern Pa is conneted to the terminal 1 and the pattern Pb to an emitter terminal Te of a circuit 2, respectively.
JP16961179A 1979-12-26 1979-12-26 Semiconductor device Pending JPS5693365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16961179A JPS5693365A (en) 1979-12-26 1979-12-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16961179A JPS5693365A (en) 1979-12-26 1979-12-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5693365A true JPS5693365A (en) 1981-07-28

Family

ID=15889698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16961179A Pending JPS5693365A (en) 1979-12-26 1979-12-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5693365A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07202224A (en) * 1993-12-28 1995-08-04 Nec Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5221779A (en) * 1975-08-13 1977-02-18 Toshiba Corp Bipolar-type semidonductor integrating circuit unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5221779A (en) * 1975-08-13 1977-02-18 Toshiba Corp Bipolar-type semidonductor integrating circuit unit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07202224A (en) * 1993-12-28 1995-08-04 Nec Corp Semiconductor device

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