JPS5693335A - Heat shielding of abnormally operating bonding device for manufacture of semiconductor device - Google Patents
Heat shielding of abnormally operating bonding device for manufacture of semiconductor deviceInfo
- Publication number
- JPS5693335A JPS5693335A JP16916879A JP16916879A JPS5693335A JP S5693335 A JPS5693335 A JP S5693335A JP 16916879 A JP16916879 A JP 16916879A JP 16916879 A JP16916879 A JP 16916879A JP S5693335 A JPS5693335 A JP S5693335A
- Authority
- JP
- Japan
- Prior art keywords
- block
- heater block
- heater
- semiconductor device
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/345—Arrangements for heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
- Die Bonding (AREA)
Abstract
PURPOSE:To prevent the generation of an inferiorly manufactured semiconductor device by a method wherein when a heater block operates abnormally, the block is made to come down and an inert as is made to flow in the gap between the block and the manufacturing parts to shield heat. CONSTITUTION:The heater block 3 having a heater 4 performs reciprocating motion upward and downward as shown with an arrow mark A at the lower side of supporting parts 2 holding a lead frame 1. N2 gas is supplied from a gas cylinder 12 through an electromagnetic valve 11 to be blown up from a pipe 5 in the direction of an arrow mark B and passes through a gap between the lead frame 1 and the heater block 3. When the heater block 3 operates abnormally, after the block 3 is locked at the descended position, both are thermally shielded by the gas. By this constitution, the thermal effect from the heater block on the semiconductor package is reduced, and the quality and the characteristic are not deteriorated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16916879A JPS5693335A (en) | 1979-12-27 | 1979-12-27 | Heat shielding of abnormally operating bonding device for manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16916879A JPS5693335A (en) | 1979-12-27 | 1979-12-27 | Heat shielding of abnormally operating bonding device for manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5693335A true JPS5693335A (en) | 1981-07-28 |
JPS5741822B2 JPS5741822B2 (en) | 1982-09-04 |
Family
ID=15881517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16916879A Granted JPS5693335A (en) | 1979-12-27 | 1979-12-27 | Heat shielding of abnormally operating bonding device for manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5693335A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5921284A (en) * | 1982-07-23 | 1984-02-03 | Hitachi Ltd | Control device for pwm inverter |
JPS61148827A (en) * | 1984-12-24 | 1986-07-07 | Toshiba Corp | Wire bonding method |
JPS63118233U (en) * | 1987-01-23 | 1988-07-30 | ||
JPH03102842A (en) * | 1989-09-14 | 1991-04-30 | Nec Corp | Semiconductor wire bonding device |
JP2011249806A (en) * | 2010-05-25 | 2011-12-08 | Samsung Electro-Mechanics Co Ltd | Wire bonding apparatus and wire bonding method |
-
1979
- 1979-12-27 JP JP16916879A patent/JPS5693335A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5921284A (en) * | 1982-07-23 | 1984-02-03 | Hitachi Ltd | Control device for pwm inverter |
JPS61148827A (en) * | 1984-12-24 | 1986-07-07 | Toshiba Corp | Wire bonding method |
JPS63118233U (en) * | 1987-01-23 | 1988-07-30 | ||
JPH03102842A (en) * | 1989-09-14 | 1991-04-30 | Nec Corp | Semiconductor wire bonding device |
JP2011249806A (en) * | 2010-05-25 | 2011-12-08 | Samsung Electro-Mechanics Co Ltd | Wire bonding apparatus and wire bonding method |
Also Published As
Publication number | Publication date |
---|---|
JPS5741822B2 (en) | 1982-09-04 |
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