JPS5484473A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5484473A
JPS5484473A JP15171177A JP15171177A JPS5484473A JP S5484473 A JPS5484473 A JP S5484473A JP 15171177 A JP15171177 A JP 15171177A JP 15171177 A JP15171177 A JP 15171177A JP S5484473 A JPS5484473 A JP S5484473A
Authority
JP
Japan
Prior art keywords
container
heating
wafers
wafer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15171177A
Other languages
Japanese (ja)
Inventor
Okimitsu Yasuda
Kiichi Kono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15171177A priority Critical patent/JPS5484473A/en
Publication of JPS5484473A publication Critical patent/JPS5484473A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To lessen the generation of crystal strains and curves through gradual heating and cooling by arranging wafers not as they are exposed in a heating container, but after they are installed in a wafer container when semiconductor wafers are heat-treated.
CONSTITUTION: Upper body 5a and lower body 5b, which form a cylinder when combined, constitute wafer container 5 and several partitioning boards 5c and 5c' supporting a wafer are provided into the container. Further, gap 5d' through which external air flows is made at the junction part between upper body 5a and lower body 5b. Container 5 in this shape is made of SiC or the like and wafers are installed in this contianer, which is set in the heating container for a heat treatment. As a result, they can be heated gradually in an atmosphere sealed in the heating container and even during cooling after the heating, no sudden variation in temperature is caused. No defect is therefore generated and electric characteristics of the obtained semiconductor device are excellent.
COPYRIGHT: (C)1979,JPO&Japio
JP15171177A 1977-12-19 1977-12-19 Manufacture of semiconductor device Pending JPS5484473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15171177A JPS5484473A (en) 1977-12-19 1977-12-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15171177A JPS5484473A (en) 1977-12-19 1977-12-19 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5484473A true JPS5484473A (en) 1979-07-05

Family

ID=15524593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15171177A Pending JPS5484473A (en) 1977-12-19 1977-12-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5484473A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02248039A (en) * 1989-03-20 1990-10-03 Fujitsu Ltd Transfer holding tool for semiconductor wafer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02248039A (en) * 1989-03-20 1990-10-03 Fujitsu Ltd Transfer holding tool for semiconductor wafer
JP2748325B2 (en) * 1989-03-20 1998-05-06 富士通株式会社 Heat treatment method for semiconductor wafer

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