JPS5691476A - Semiconductor - Google Patents
SemiconductorInfo
- Publication number
- JPS5691476A JPS5691476A JP16870679A JP16870679A JPS5691476A JP S5691476 A JPS5691476 A JP S5691476A JP 16870679 A JP16870679 A JP 16870679A JP 16870679 A JP16870679 A JP 16870679A JP S5691476 A JPS5691476 A JP S5691476A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- oxide
- gate
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16870679A JPS5691476A (en) | 1979-12-25 | 1979-12-25 | Semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16870679A JPS5691476A (en) | 1979-12-25 | 1979-12-25 | Semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5691476A true JPS5691476A (en) | 1981-07-24 |
| JPS6127917B2 JPS6127917B2 (enrdf_load_stackoverflow) | 1986-06-27 |
Family
ID=15872932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16870679A Granted JPS5691476A (en) | 1979-12-25 | 1979-12-25 | Semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5691476A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01111199U (enrdf_load_stackoverflow) * | 1988-01-19 | 1989-07-26 |
-
1979
- 1979-12-25 JP JP16870679A patent/JPS5691476A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6127917B2 (enrdf_load_stackoverflow) | 1986-06-27 |
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