JPS5690568A - Semiconductor device for photoelectric transducer - Google Patents

Semiconductor device for photoelectric transducer

Info

Publication number
JPS5690568A
JPS5690568A JP16669379A JP16669379A JPS5690568A JP S5690568 A JPS5690568 A JP S5690568A JP 16669379 A JP16669379 A JP 16669379A JP 16669379 A JP16669379 A JP 16669379A JP S5690568 A JPS5690568 A JP S5690568A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
lens
image
made
photoelectric transducer
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16669379A
Inventor
Kenji Nakauchi
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0232Optical elements or arrangements associated with the device
    • H01L31/02325Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Abstract

PURPOSE:To provide a low cost photoelectric transducer device by a method wherein a lens for making an image at a photoelectric transducer part is integrally molded by a transparent resin when a wafer is molded. CONSTITUTION:P type layer 2 is made at N type Si wafer 1, and the desired circuits 3 are placed at the right and left sides of the layer 2. After the photodiode parts are connected to the circuits 3, a front surface of the wafer 1 is selectively covered by SiO2 film 4, a light shield mask 5 is applied to restrict a light receiving surface and thereby the circuits 3 are shielded against the light. The image is made at the input/output pin 6 under the mask 5 and SiO2 film 4. Then, when the device is molded by a transparent epoxy resin 7, the lens 8 is integrally molded and the image is made on the photodiode. The part of the top surface of the resin 7 other than the lens 8 is covered by the light shield layer 9. The arrangement is simple in its construction and no lens fixing operation is required, no displacement of the lens is found to reduce a cost for the device.
JP16669379A 1979-12-21 1979-12-21 Semiconductor device for photoelectric transducer Pending JPS5690568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16669379A JPS5690568A (en) 1979-12-21 1979-12-21 Semiconductor device for photoelectric transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16669379A JPS5690568A (en) 1979-12-21 1979-12-21 Semiconductor device for photoelectric transducer

Publications (1)

Publication Number Publication Date
JPS5690568A true true JPS5690568A (en) 1981-07-22

Family

ID=15835981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16669379A Pending JPS5690568A (en) 1979-12-21 1979-12-21 Semiconductor device for photoelectric transducer

Country Status (1)

Country Link
JP (1) JPS5690568A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01176954U (en) * 1988-06-01 1989-12-18
US4920075A (en) * 1982-06-15 1990-04-24 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device having a lens section
JP2002141518A (en) * 2000-10-30 2002-05-17 Seiko Instruments Inc Structure and manufacturing method of semiconductor module
JP2002246613A (en) * 2001-02-14 2002-08-30 Seiko Instruments Inc Optical function module and its manufacturing method
US7157302B2 (en) 1998-06-04 2007-01-02 Micron Technology, Inc. Imaging device and method of manufacture
JP2011009408A (en) * 2009-06-25 2011-01-13 Ricoh Co Ltd Electronic component module and manufacturing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5256776U (en) * 1975-10-23 1977-04-23
JPS534772U (en) * 1976-06-30 1978-01-17

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5256776U (en) * 1975-10-23 1977-04-23
JPS534772U (en) * 1976-06-30 1978-01-17

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4920075A (en) * 1982-06-15 1990-04-24 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device having a lens section
JPH01176954U (en) * 1988-06-01 1989-12-18
US7157302B2 (en) 1998-06-04 2007-01-02 Micron Technology, Inc. Imaging device and method of manufacture
JP2002141518A (en) * 2000-10-30 2002-05-17 Seiko Instruments Inc Structure and manufacturing method of semiconductor module
JP2002246613A (en) * 2001-02-14 2002-08-30 Seiko Instruments Inc Optical function module and its manufacturing method
JP2011009408A (en) * 2009-06-25 2011-01-13 Ricoh Co Ltd Electronic component module and manufacturing method

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