JPS5690568A - Semiconductor device for photoelectric transducer - Google Patents
Semiconductor device for photoelectric transducerInfo
- Publication number
- JPS5690568A JPS5690568A JP16669379A JP16669379A JPS5690568A JP S5690568 A JPS5690568 A JP S5690568A JP 16669379 A JP16669379 A JP 16669379A JP 16669379 A JP16669379 A JP 16669379A JP S5690568 A JPS5690568 A JP S5690568A
- Authority
- JP
- Japan
- Prior art keywords
- lens
- wafer
- photoelectric transducer
- image
- circuits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229920005989 resin Polymers 0.000 abstract 2
- 239000011347 resin Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000006073 displacement reaction Methods 0.000 abstract 1
- 239000003822 epoxy resin Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920000647 polyepoxide Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To provide a low cost photoelectric transducer device by a method wherein a lens for making an image at a photoelectric transducer part is integrally molded by a transparent resin when a wafer is molded. CONSTITUTION:P type layer 2 is made at N type Si wafer 1, and the desired circuits 3 are placed at the right and left sides of the layer 2. After the photodiode parts are connected to the circuits 3, a front surface of the wafer 1 is selectively covered by SiO2 film 4, a light shield mask 5 is applied to restrict a light receiving surface and thereby the circuits 3 are shielded against the light. The image is made at the input/output pin 6 under the mask 5 and SiO2 film 4. Then, when the device is molded by a transparent epoxy resin 7, the lens 8 is integrally molded and the image is made on the photodiode. The part of the top surface of the resin 7 other than the lens 8 is covered by the light shield layer 9. The arrangement is simple in its construction and no lens fixing operation is required, no displacement of the lens is found to reduce a cost for the device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16669379A JPS5690568A (en) | 1979-12-21 | 1979-12-21 | Semiconductor device for photoelectric transducer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16669379A JPS5690568A (en) | 1979-12-21 | 1979-12-21 | Semiconductor device for photoelectric transducer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5690568A true JPS5690568A (en) | 1981-07-22 |
Family
ID=15835981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16669379A Pending JPS5690568A (en) | 1979-12-21 | 1979-12-21 | Semiconductor device for photoelectric transducer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5690568A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01176954U (en) * | 1988-06-01 | 1989-12-18 | ||
US4920075A (en) * | 1982-06-15 | 1990-04-24 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device having a lens section |
JP2002141518A (en) * | 2000-10-30 | 2002-05-17 | Seiko Instruments Inc | Structure and manufacturing method of semiconductor module |
JP2002246613A (en) * | 2001-02-14 | 2002-08-30 | Seiko Instruments Inc | Optical function module and its manufacturing method |
US7157302B2 (en) | 1998-06-04 | 2007-01-02 | Micron Technology, Inc. | Imaging device and method of manufacture |
JP2011009408A (en) * | 2009-06-25 | 2011-01-13 | Ricoh Co Ltd | Electronic component module and manufacturing method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5256776U (en) * | 1975-10-23 | 1977-04-23 | ||
JPS534772U (en) * | 1976-06-30 | 1978-01-17 |
-
1979
- 1979-12-21 JP JP16669379A patent/JPS5690568A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5256776U (en) * | 1975-10-23 | 1977-04-23 | ||
JPS534772U (en) * | 1976-06-30 | 1978-01-17 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4920075A (en) * | 1982-06-15 | 1990-04-24 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device having a lens section |
JPH01176954U (en) * | 1988-06-01 | 1989-12-18 | ||
US7157302B2 (en) | 1998-06-04 | 2007-01-02 | Micron Technology, Inc. | Imaging device and method of manufacture |
JP2002141518A (en) * | 2000-10-30 | 2002-05-17 | Seiko Instruments Inc | Structure and manufacturing method of semiconductor module |
JP2002246613A (en) * | 2001-02-14 | 2002-08-30 | Seiko Instruments Inc | Optical function module and its manufacturing method |
JP2011009408A (en) * | 2009-06-25 | 2011-01-13 | Ricoh Co Ltd | Electronic component module and manufacturing method |
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