JPS5690519A - Diffusion of impurity to semiconductor substrate - Google Patents
Diffusion of impurity to semiconductor substrateInfo
- Publication number
- JPS5690519A JPS5690519A JP16879279A JP16879279A JPS5690519A JP S5690519 A JPS5690519 A JP S5690519A JP 16879279 A JP16879279 A JP 16879279A JP 16879279 A JP16879279 A JP 16879279A JP S5690519 A JPS5690519 A JP S5690519A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- boat
- homothermal
- reactor core
- core pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
- C30B31/165—Diffusion sources
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To even diffusion by a method wherein in a diffusion boat provided standing at a fixed interval with plurality of semiconductor substrates and a plate- shaped solid diffusion source, on the boat of the portion opposing to the center of a diffusion furnace homothermal part no substrate and such is placed thus the thermal capacity of this part is reduced. CONSTITUTION:Into a diffusion furnace 1 of a high frequency heating system or of a resistance heating system a reactor core pipe 2 of quartz having a gas introducing port on one end and a boat inserting port on the other end is inserted to use the region L between a fixed distance B C in the reactor core pipe 2 as a homothermal part. In said constitution, a quartz boat provided standing at a fixed interval with a semiconductor substrate 7 to be treated and a plate-shaped solid diffusion source 6 is inserted into the reactor core pipe 2, whereby on the boat 5 of a portion opposing to the central part A of the homothermal part about 10% of the whole length is left blank. In this way the thermal capacity is reduced in the center A of the homothermal part thus to make even the diffusion to all of the substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16879279A JPS5690519A (en) | 1979-12-24 | 1979-12-24 | Diffusion of impurity to semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16879279A JPS5690519A (en) | 1979-12-24 | 1979-12-24 | Diffusion of impurity to semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5690519A true JPS5690519A (en) | 1981-07-22 |
Family
ID=15874551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16879279A Pending JPS5690519A (en) | 1979-12-24 | 1979-12-24 | Diffusion of impurity to semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5690519A (en) |
-
1979
- 1979-12-24 JP JP16879279A patent/JPS5690519A/en active Pending
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