JPS5690519A - Diffusion of impurity to semiconductor substrate - Google Patents

Diffusion of impurity to semiconductor substrate

Info

Publication number
JPS5690519A
JPS5690519A JP16879279A JP16879279A JPS5690519A JP S5690519 A JPS5690519 A JP S5690519A JP 16879279 A JP16879279 A JP 16879279A JP 16879279 A JP16879279 A JP 16879279A JP S5690519 A JPS5690519 A JP S5690519A
Authority
JP
Japan
Prior art keywords
diffusion
boat
homothermal
reactor core
core pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16879279A
Other languages
Japanese (ja)
Inventor
Yasuhiro Kaji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16879279A priority Critical patent/JPS5690519A/en
Publication of JPS5690519A publication Critical patent/JPS5690519A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165Diffusion sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To even diffusion by a method wherein in a diffusion boat provided standing at a fixed interval with plurality of semiconductor substrates and a plate- shaped solid diffusion source, on the boat of the portion opposing to the center of a diffusion furnace homothermal part no substrate and such is placed thus the thermal capacity of this part is reduced. CONSTITUTION:Into a diffusion furnace 1 of a high frequency heating system or of a resistance heating system a reactor core pipe 2 of quartz having a gas introducing port on one end and a boat inserting port on the other end is inserted to use the region L between a fixed distance B C in the reactor core pipe 2 as a homothermal part. In said constitution, a quartz boat provided standing at a fixed interval with a semiconductor substrate 7 to be treated and a plate-shaped solid diffusion source 6 is inserted into the reactor core pipe 2, whereby on the boat 5 of a portion opposing to the central part A of the homothermal part about 10% of the whole length is left blank. In this way the thermal capacity is reduced in the center A of the homothermal part thus to make even the diffusion to all of the substrates.
JP16879279A 1979-12-24 1979-12-24 Diffusion of impurity to semiconductor substrate Pending JPS5690519A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16879279A JPS5690519A (en) 1979-12-24 1979-12-24 Diffusion of impurity to semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16879279A JPS5690519A (en) 1979-12-24 1979-12-24 Diffusion of impurity to semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS5690519A true JPS5690519A (en) 1981-07-22

Family

ID=15874551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16879279A Pending JPS5690519A (en) 1979-12-24 1979-12-24 Diffusion of impurity to semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5690519A (en)

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