JPS568840A - Monitoring method for deterioration of semiconductor device - Google Patents
Monitoring method for deterioration of semiconductor deviceInfo
- Publication number
- JPS568840A JPS568840A JP8426279A JP8426279A JPS568840A JP S568840 A JPS568840 A JP S568840A JP 8426279 A JP8426279 A JP 8426279A JP 8426279 A JP8426279 A JP 8426279A JP S568840 A JPS568840 A JP S568840A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- prepared
- region
- semiconductor device
- ammeter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To make it easy to desides the exchange of a semiconductor device for a new device by a method wherein a structure of rectifying contact or a MIS capacitor is prepared in the neighborhood of the device in the semiconductor substrate constituting the semiconductor device, and the increment of threshold voltage of device is estimated from the quantity of electric charge flowing into a depletion layer belonging to this structure. CONSTITUTION:Reverse conducting type regions 21, 22 are prepared in a one-conducting type semiconductor substrate, and an electrode 3 is fitted up putting insultating films between them to form a MOS type transistor. The region 21 is connected to the earth, a power source 5 is connected to the electrode 3 and to the region 3 and to the region 22 respectively and the transistor action is made to be performed. In this constitution, another p-n junction structure is prepared in the same substrate in the neighborhood of the transistor to be monitored about deterioration, and the reverse biasing power source 5 is connected to it through an ammeter 4. By this way, if the avalanche phenomenon takes place during the operation of the transistor, plural holes flow into a depletion layer under the structure 25, so that the phenomenon can be detected instantaneously by the ammeter 4.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8426279A JPS568840A (en) | 1979-07-03 | 1979-07-03 | Monitoring method for deterioration of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8426279A JPS568840A (en) | 1979-07-03 | 1979-07-03 | Monitoring method for deterioration of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS568840A true JPS568840A (en) | 1981-01-29 |
JPS6246980B2 JPS6246980B2 (en) | 1987-10-06 |
Family
ID=13825532
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8426279A Granted JPS568840A (en) | 1979-07-03 | 1979-07-03 | Monitoring method for deterioration of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS568840A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4944556A (en) * | 1972-09-06 | 1974-04-26 |
-
1979
- 1979-07-03 JP JP8426279A patent/JPS568840A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4944556A (en) * | 1972-09-06 | 1974-04-26 |
Also Published As
Publication number | Publication date |
---|---|
JPS6246980B2 (en) | 1987-10-06 |
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