JPS5688315A - Apparatus for gaseous phase growth - Google Patents

Apparatus for gaseous phase growth

Info

Publication number
JPS5688315A
JPS5688315A JP16618379A JP16618379A JPS5688315A JP S5688315 A JPS5688315 A JP S5688315A JP 16618379 A JP16618379 A JP 16618379A JP 16618379 A JP16618379 A JP 16618379A JP S5688315 A JPS5688315 A JP S5688315A
Authority
JP
Japan
Prior art keywords
electrode
electric field
ions
gaseous phase
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16618379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6114652B2 (enrdf_load_stackoverflow
Inventor
Shinji Nishiura
Yoshiyuki Uchida
Yukio Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP16618379A priority Critical patent/JPS5688315A/ja
Publication of JPS5688315A publication Critical patent/JPS5688315A/ja
Publication of JPS6114652B2 publication Critical patent/JPS6114652B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP16618379A 1979-12-20 1979-12-20 Apparatus for gaseous phase growth Granted JPS5688315A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16618379A JPS5688315A (en) 1979-12-20 1979-12-20 Apparatus for gaseous phase growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16618379A JPS5688315A (en) 1979-12-20 1979-12-20 Apparatus for gaseous phase growth

Publications (2)

Publication Number Publication Date
JPS5688315A true JPS5688315A (en) 1981-07-17
JPS6114652B2 JPS6114652B2 (enrdf_load_stackoverflow) 1986-04-19

Family

ID=15826604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16618379A Granted JPS5688315A (en) 1979-12-20 1979-12-20 Apparatus for gaseous phase growth

Country Status (1)

Country Link
JP (1) JPS5688315A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6364645U (enrdf_load_stackoverflow) * 1986-10-15 1988-04-28
JPS6388962U (enrdf_load_stackoverflow) * 1986-11-27 1988-06-09

Also Published As

Publication number Publication date
JPS6114652B2 (enrdf_load_stackoverflow) 1986-04-19

Similar Documents

Publication Publication Date Title
US4716491A (en) High frequency plasma generation apparatus
US5517084A (en) Selective ion source
US4158589A (en) Negative ion extractor for a plasma etching apparatus
KR950000310B1 (ko) 플라즈마 cvd장치
US5519213A (en) Fast atom beam source
JPS5688315A (en) Apparatus for gaseous phase growth
Okumura et al. Cesium mixing in the multi‐ampere volume H− ion source
JPS5698820A (en) Preparation of amorphous semiconductor film
JPS5689835A (en) Vapor phase growth apparatus
Nezlin Electrostatic instability of an Intense Electron Beam in a Plasma
US2762941A (en) Positive ion electrostatic accelerator
JPS5615838A (en) Gaseous phase growth device
JPS5760073A (en) Plasma etching method
JPS5511127A (en) Forming method for oxidation film
US3532915A (en) High frequency ion source formed by a discharge between a secondary-emitting electrode and a grid
JPS5740845A (en) Ion beam generator
JPS63279552A (ja) イオンビ−ム照射装置
JPS63155546A (ja) イオンドーピング装置
Miura et al. Characteristics of negative ion current by control of bias voltage to second anode in Cs-free negative ion source using TPDSheet-U
RU2109367C1 (ru) Способ получения отрицательных ионов в поверхностно-плазменных источниках
JPS55110774A (en) High vacuum ion plating apparatus
JPS6465843A (en) Plasma treatment device
Keller et al. Optimization of a single-aperture extraction system for high-current ion sources
SU1382297A1 (ru) Взрывоэмиссионный источник ионов
JPS57208125A (en) Method and apparatus for manufacturing thin film