JPS5688315A - Apparatus for gaseous phase growth - Google Patents
Apparatus for gaseous phase growthInfo
- Publication number
- JPS5688315A JPS5688315A JP16618379A JP16618379A JPS5688315A JP S5688315 A JPS5688315 A JP S5688315A JP 16618379 A JP16618379 A JP 16618379A JP 16618379 A JP16618379 A JP 16618379A JP S5688315 A JPS5688315 A JP S5688315A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electric field
- ions
- gaseous phase
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16618379A JPS5688315A (en) | 1979-12-20 | 1979-12-20 | Apparatus for gaseous phase growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16618379A JPS5688315A (en) | 1979-12-20 | 1979-12-20 | Apparatus for gaseous phase growth |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5688315A true JPS5688315A (en) | 1981-07-17 |
JPS6114652B2 JPS6114652B2 (enrdf_load_stackoverflow) | 1986-04-19 |
Family
ID=15826604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16618379A Granted JPS5688315A (en) | 1979-12-20 | 1979-12-20 | Apparatus for gaseous phase growth |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5688315A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6364645U (enrdf_load_stackoverflow) * | 1986-10-15 | 1988-04-28 | ||
JPS6388962U (enrdf_load_stackoverflow) * | 1986-11-27 | 1988-06-09 |
-
1979
- 1979-12-20 JP JP16618379A patent/JPS5688315A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6114652B2 (enrdf_load_stackoverflow) | 1986-04-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5039376A (en) | Method and apparatus for the plasma etching, substrate cleaning, or deposition of materials by D.C. glow discharge | |
US4716491A (en) | High frequency plasma generation apparatus | |
US5517084A (en) | Selective ion source | |
DE69112166T2 (de) | Plasmaquellenvorrichtung für Ionenimplantierung. | |
KR950000310B1 (ko) | 플라즈마 cvd장치 | |
US5519213A (en) | Fast atom beam source | |
JPS5688315A (en) | Apparatus for gaseous phase growth | |
Okumura et al. | Cesium mixing in the multi‐ampere volume H− ion source | |
JPS5698820A (en) | Preparation of amorphous semiconductor film | |
JPS5689835A (en) | Vapor phase growth apparatus | |
JPS5615838A (en) | Gaseous phase growth device | |
JPS5760073A (en) | Plasma etching method | |
JPS5511127A (en) | Forming method for oxidation film | |
US3532915A (en) | High frequency ion source formed by a discharge between a secondary-emitting electrode and a grid | |
JPS5740845A (en) | Ion beam generator | |
JPS63279552A (ja) | イオンビ−ム照射装置 | |
JPS63155546A (ja) | イオンドーピング装置 | |
Miura et al. | Characteristics of negative ion current by control of bias voltage to second anode in Cs-free negative ion source using TPDSheet-U | |
RU2109367C1 (ru) | Способ получения отрицательных ионов в поверхностно-плазменных источниках | |
JPS55110774A (en) | High vacuum ion plating apparatus | |
JPS5740758A (en) | Method and device for manufacturing magnetic recording medium | |
JPS6465843A (en) | Plasma treatment device | |
JPH0760665B2 (ja) | 表面改質装置 | |
SU1382297A1 (ru) | Взрывоэмиссионный источник ионов | |
JPS57208125A (en) | Method and apparatus for manufacturing thin film |