JPS5673427A - Manufacture of gallium arsenide epitaxial wafer - Google Patents

Manufacture of gallium arsenide epitaxial wafer

Info

Publication number
JPS5673427A
JPS5673427A JP15025379A JP15025379A JPS5673427A JP S5673427 A JPS5673427 A JP S5673427A JP 15025379 A JP15025379 A JP 15025379A JP 15025379 A JP15025379 A JP 15025379A JP S5673427 A JPS5673427 A JP S5673427A
Authority
JP
Japan
Prior art keywords
hcl
layer
flow rate
gaas
specified
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15025379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6222444B2 (https=
Inventor
Katsunobu Maeda
Yoshinobu Tsujikawa
Hideki Oikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP15025379A priority Critical patent/JPS5673427A/ja
Publication of JPS5673427A publication Critical patent/JPS5673427A/ja
Publication of JPS6222444B2 publication Critical patent/JPS6222444B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
JP15025379A 1979-11-20 1979-11-20 Manufacture of gallium arsenide epitaxial wafer Granted JPS5673427A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15025379A JPS5673427A (en) 1979-11-20 1979-11-20 Manufacture of gallium arsenide epitaxial wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15025379A JPS5673427A (en) 1979-11-20 1979-11-20 Manufacture of gallium arsenide epitaxial wafer

Publications (2)

Publication Number Publication Date
JPS5673427A true JPS5673427A (en) 1981-06-18
JPS6222444B2 JPS6222444B2 (https=) 1987-05-18

Family

ID=15492895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15025379A Granted JPS5673427A (en) 1979-11-20 1979-11-20 Manufacture of gallium arsenide epitaxial wafer

Country Status (1)

Country Link
JP (1) JPS5673427A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100768803B1 (ko) * 2001-06-14 2007-10-19 익시스 코포레이션 Ⅲ-ⅴ족 화합물층을 구비한 반도체 소자

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915991A (https=) * 1972-06-05 1974-02-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915991A (https=) * 1972-06-05 1974-02-12

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100768803B1 (ko) * 2001-06-14 2007-10-19 익시스 코포레이션 Ⅲ-ⅴ족 화합물층을 구비한 반도체 소자

Also Published As

Publication number Publication date
JPS6222444B2 (https=) 1987-05-18

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