JPS5671934A - Semiconductor manufacturing device - Google Patents
Semiconductor manufacturing deviceInfo
- Publication number
- JPS5671934A JPS5671934A JP14911279A JP14911279A JPS5671934A JP S5671934 A JPS5671934 A JP S5671934A JP 14911279 A JP14911279 A JP 14911279A JP 14911279 A JP14911279 A JP 14911279A JP S5671934 A JPS5671934 A JP S5671934A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- pipe
- small holes
- gaps
- internal walls
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
PURPOSE:To uniform a diffusion concentration by composing a cylindrical reactor core pipe as double wall structure wherein the gaps are used as a gas supply passage and an exhaust passage for raw material gases and many small holes are provided at internal walls and wafers vertically placed on support bases are passed through in a furnace by heating the furnace. CONSTITUTION:A quartz cylindrical reactor core pipe 11 surrounding the external circumference by heaters 29 is composed as double wall structure having internal walls 16. One end section of the gaps caused between the pipe 11 and the walls 16 are closed by covers 25 and the gaps are divided into the upper section and the lower section by bulkheads. Many small holes 20 and 19 are opened at the upper and the lower internal walls 16. The lower gap is used as a gas supply passage 21 and the upper gas as a gas exhaust passage 24. Carrier gas 22 and doping gas 23 are sent to the supply passage 21 and they are exhausted from the exhaust passage 24 through the small holes 20 after injecting them into the pipe 11 from the small holes 19. The pipe 11 is composed as the above. And support bases 20 vertically placing wafers 17 are inserted from an insertion port 12 and are taken out from a lead port 13 after finishing diffusion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14911279A JPS5671934A (en) | 1979-11-16 | 1979-11-16 | Semiconductor manufacturing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14911279A JPS5671934A (en) | 1979-11-16 | 1979-11-16 | Semiconductor manufacturing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5671934A true JPS5671934A (en) | 1981-06-15 |
Family
ID=15467964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14911279A Pending JPS5671934A (en) | 1979-11-16 | 1979-11-16 | Semiconductor manufacturing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5671934A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63136529A (en) * | 1986-11-27 | 1988-06-08 | Toshiba Corp | Production device for semiconductor |
| US6374968B1 (en) | 1999-04-22 | 2002-04-23 | Vibrachoc | Resonant device, such as a striker or load generator |
-
1979
- 1979-11-16 JP JP14911279A patent/JPS5671934A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63136529A (en) * | 1986-11-27 | 1988-06-08 | Toshiba Corp | Production device for semiconductor |
| US6374968B1 (en) | 1999-04-22 | 2002-04-23 | Vibrachoc | Resonant device, such as a striker or load generator |
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