JPS5718328A - H2o gas generating apparatus for oxidation of semiconductor wafer - Google Patents

H2o gas generating apparatus for oxidation of semiconductor wafer

Info

Publication number
JPS5718328A
JPS5718328A JP9356380A JP9356380A JPS5718328A JP S5718328 A JPS5718328 A JP S5718328A JP 9356380 A JP9356380 A JP 9356380A JP 9356380 A JP9356380 A JP 9356380A JP S5718328 A JPS5718328 A JP S5718328A
Authority
JP
Japan
Prior art keywords
gas
semiconductor wafer
nozzle
combustion chamber
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9356380A
Other languages
Japanese (ja)
Inventor
Hajime Onoda
Yasuhiro Ichiko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KINMON SEISAKUSHO
KINMON SEISAKUSHO KK
Original Assignee
KINMON SEISAKUSHO
KINMON SEISAKUSHO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KINMON SEISAKUSHO, KINMON SEISAKUSHO KK filed Critical KINMON SEISAKUSHO
Priority to JP9356380A priority Critical patent/JPS5718328A/en
Publication of JPS5718328A publication Critical patent/JPS5718328A/en
Pending legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F22—STEAM GENERATION
    • F22B—METHODS OF STEAM GENERATION; STEAM BOILERS
    • F22B1/00—Methods of steam generation characterised by form of heating method
    • F22B1/003—Methods of steam generation characterised by form of heating method using combustion of hydrogen with oxygen
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C23C8/16—Oxidising using oxygen-containing compounds, e.g. water, carbon dioxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Sustainable Development (AREA)
  • Thermal Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Sustainable Energy (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To accomplish a uniform oxidation with the introduction of highly pure H2O by arranging a nozzle for injecting an H2 gas and an O2 gas simultaneously and a combustor with an ignition nozzle in a combustion chamber having a safety lid connected to a furnace core tube by way of a communicating path. CONSTITUTION:An H2O gas feeding tube is provided at a part o a furnace core tube 1 housing a semiconductor wafer and communicated to an H2O gas generator 3 made up of a communicating path and a combustion chamber with a safety lid. A main nozzle for injecting an H2 gas and a O2 simultaneously and a combustor with an ignition nozzle for ignition H2 gas are provided in the combustion chamber. The H2 gas is burnt in the chamber and an H2O gas generated is introduced into the furnace core tube with the O2 gas to oxidize the semiconductor wafer. This enables uniform mixing of a highly pure H2O gas with the O2 gas thereby oxidizing the semiconductor wafer evenly.
JP9356380A 1980-07-09 1980-07-09 H2o gas generating apparatus for oxidation of semiconductor wafer Pending JPS5718328A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9356380A JPS5718328A (en) 1980-07-09 1980-07-09 H2o gas generating apparatus for oxidation of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9356380A JPS5718328A (en) 1980-07-09 1980-07-09 H2o gas generating apparatus for oxidation of semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS5718328A true JPS5718328A (en) 1982-01-30

Family

ID=14085709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9356380A Pending JPS5718328A (en) 1980-07-09 1980-07-09 H2o gas generating apparatus for oxidation of semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5718328A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60186023A (en) * 1984-03-05 1985-09-21 Nippon Telegr & Teleph Corp <Ntt> Steam treating device
EP0209065A2 (en) * 1985-07-15 1987-01-21 Dainippon Screen Mfg. Co., Ltd. Method for supplying an oxygen gas containing steam for the surface treatment of semiconductor wafers
EP0279406A2 (en) * 1987-02-16 1988-08-24 Canon Kabushiki Kaisha Device for forming silicon oxide film
WO1991013461A1 (en) * 1990-02-20 1991-09-05 Kabushiki Kaisha Toshiba Method of treating semiconductor substrate surface and device therefor
US5489446A (en) * 1987-02-16 1996-02-06 Canon Kabushiki Kaisha Device for forming silicon oxide film
JP2010147432A (en) * 2008-12-22 2010-07-01 Hitachi Kokusai Electric Inc Substrate processing apparatus, and method for manufacturing semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60186023A (en) * 1984-03-05 1985-09-21 Nippon Telegr & Teleph Corp <Ntt> Steam treating device
EP0209065A2 (en) * 1985-07-15 1987-01-21 Dainippon Screen Mfg. Co., Ltd. Method for supplying an oxygen gas containing steam for the surface treatment of semiconductor wafers
EP0279406A2 (en) * 1987-02-16 1988-08-24 Canon Kabushiki Kaisha Device for forming silicon oxide film
US5489446A (en) * 1987-02-16 1996-02-06 Canon Kabushiki Kaisha Device for forming silicon oxide film
WO1991013461A1 (en) * 1990-02-20 1991-09-05 Kabushiki Kaisha Toshiba Method of treating semiconductor substrate surface and device therefor
US5314847A (en) * 1990-02-20 1994-05-24 Kabushiki Kaisha Toshiba Semiconductor substrate surface processing method using combustion flame
JP2010147432A (en) * 2008-12-22 2010-07-01 Hitachi Kokusai Electric Inc Substrate processing apparatus, and method for manufacturing semiconductor device

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