JPS63136529A - Production device for semiconductor - Google Patents
Production device for semiconductorInfo
- Publication number
- JPS63136529A JPS63136529A JP28059486A JP28059486A JPS63136529A JP S63136529 A JPS63136529 A JP S63136529A JP 28059486 A JP28059486 A JP 28059486A JP 28059486 A JP28059486 A JP 28059486A JP S63136529 A JPS63136529 A JP S63136529A
- Authority
- JP
- Japan
- Prior art keywords
- boat
- cage
- cover
- quartz
- reaction tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000004065 semiconductor Substances 0.000 title claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 239000010453 quartz Substances 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 17
- 238000005096 rolling process Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 17
- 235000012239 silicon dioxide Nutrition 0.000 description 17
- 239000002245 particle Substances 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005755 formation reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
[発明の目的]
(産業上の利用分野)
本発明は半導体製造装置に関し、特に反応管内にカゴ状
カバーを固定した縦型減圧CVD装置に係わる。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a semiconductor manufacturing apparatus, and particularly to a vertical reduced pressure CVD apparatus in which a cage-shaped cover is fixed inside a reaction tube.
(従来の技術)
従来、S I H4−02系によるSiO2膜の形成な
ど成膜反応が供給律速となる@膜を減圧CVDによって
成膜する場合、良好な膜厚の均一性を得るためにカゴ状
のボートが用いられている。(Prior art) Conventionally, when forming a film using low pressure CVD where the film formation reaction is rate-limiting, such as the formation of an SiO2 film using the S I H4-02 system, a cage was used to obtain good film thickness uniformity. A type of boat is used.
従来、かかるボートを用いた縦型減圧CVD装置として
は、第2図に示すものが知られている。Conventionally, as a vertical reduced pressure CVD apparatus using such a boat, the one shown in FIG. 2 is known.
図中の1は、下端側が開口した石英製の反応管である。1 in the figure is a quartz reaction tube with an open bottom end.
この反応管1は、フランジ2を介してフランジ扉3上に
載置されている。前記反応管1内にはボート支持台4が
設けられ、該支持台4はフランジ辱3に取付けられたボ
ート回転機構5により回転可能になっている。前記支持
台4上には、第4図に示すカゴ状のボート6がセットさ
れている。このボート6は、第5図に示す如くウェハを
保有する石英製のボート本体6aと、これと嵌合自在な
石英製のカバー6bとから構成されている。This reaction tube 1 is placed on a flange door 3 via a flange 2. A boat support 4 is provided inside the reaction tube 1, and the support 4 is rotatable by a boat rotation mechanism 5 attached to the flange 3. A cage-shaped boat 6 shown in FIG. 4 is set on the support stand 4. As shown in FIG. As shown in FIG. 5, this boat 6 is comprised of a quartz boat body 6a that holds wafers, and a quartz cover 6b that can be freely fitted onto the quartz boat body 6a.
また、前記ボート6は、図示しないエレベータ機構によ
り前記反応管1内に挿入される。Further, the boat 6 is inserted into the reaction tube 1 by an elevator mechanism (not shown).
ところで、一般の石英製のボートに対するつ工ハのセッ
トは自動化が進んでおり、特に縦型減圧CVD1置では
自動化が容易である。しかしながら、従来装置によれば
、以下に述べる問題点を有する。Incidentally, the automation of the setting of tools for general quartz boats is progressing, and automation is particularly easy for a single vertical low-pressure CVD system. However, the conventional device has the following problems.
■カバー6bをボート本体6aに嵌合させる作業が不可
欠であり自動化が困難であるとともに、ボート本体6a
とカバー6bの間など接触部分も増加する。その結果、
プロセス中のパーティクルの増加を招き、人為的ミスを
引き起こし易い。■The work of fitting the cover 6b to the boat body 6a is essential and difficult to automate;
The contact area between the cover 6b and the cover 6b also increases. the result,
This leads to an increase in particles during the process and is prone to human error.
■ウェハとカゴ状のボート6との位置関係が固定されて
いるため、ウェハに形成した薄膜には、第3図に示す如
くボート6の形状に依存して局所的に膜厚の厚い部分7
が現われる。なお、図中の8はウェハを示す。■Since the positional relationship between the wafer and the cage-shaped boat 6 is fixed, the thin film formed on the wafer has locally thicker parts 7 depending on the shape of the boat 6, as shown in FIG.
appears. Note that 8 in the figure indicates a wafer.
また、石英製のボートの代わりに金属製のボートを用い
た縦型減圧CVD装置が知られているが、かかる装置の
場合、ボートの出し入れ時に熱膨張率の差によりボート
上に累積した膜が剥がれ、粒子汚染をもたらす。Also, a vertical low pressure CVD device is known that uses a metal boat instead of a quartz boat, but in such a device, the film that accumulates on the boat due to the difference in thermal expansion coefficient when the boat is taken in and out is Peeling off, resulting in particle contamination.
(発明が解決しようとする問題点)
本発明は上記事情に鑑みてなされたもので、膜厚の均一
性を損う事なくウェハのセット、リセットの自動化を容
易にし、かつボートのコスト低減をなし得る半導体製造
装置を提供することを目的とする。(Problems to be Solved by the Invention) The present invention has been made in view of the above circumstances, and it facilitates automation of wafer setting and resetting without impairing film thickness uniformity, and reduces boat costs. The purpose of the present invention is to provide a semiconductor manufacturing apparatus that can be used for manufacturing semiconductor devices.
[発明の構成]
(問題点を解決するための手段)
本発明は、周囲に加熱手段を配設した石英製の反応管と
、この反応管内に固定された一端側が開口された金a製
のカゴ状カバーと、このカゴ状カバー内に取り出し自在
に挿入されたボートとからなり、ウェハロード時にボー
トをカゴ状カバーに挿入した状態で前記反応管内にセッ
トすることを要旨とする。[Structure of the Invention] (Means for Solving the Problems) The present invention consists of a reaction tube made of quartz around which a heating means is arranged, and a reaction tube made of gold A with one end opened and fixed in the reaction tube. It consists of a cage-shaped cover and a boat that is removably inserted into the cage-shaped cover, and the gist is that when loading wafers, the boat is inserted into the cage-shaped cover and set in the reaction tube.
(作用)
本発明は、ボートを覆うカゴを金属製にするとともにこ
のカゴを反応管に固定し、ウェハロード時はボートごと
カバーに挿入される状態にしたことを特徴とする。従っ
て、S i H4−02系によるSiO2膜など成膜反
応が供給律速となる膜の形成において、膜厚の均一性を
損うことなくウェハのセット、リセットの自動化を容易
にし、かつカゴのコストを低減できる。特に、縦型減圧
CVD装置に適用した場合には、更にパーティクルの減
少、膜厚の均一性の向上の効果もあり、これにより歩留
りの向上、生産性の向上など顕著な効果が期待できる。(Function) The present invention is characterized in that the basket covering the boat is made of metal, and this basket is fixed to the reaction tube, so that the entire boat is inserted into the cover when loading wafers. Therefore, in the formation of films such as SiO2 films using the S i H4-02 system, where the film formation reaction is the rate-limiting supply, it is possible to easily automate the setting and resetting of wafers without impairing the uniformity of the film thickness, and to reduce the cost of the basket. can be reduced. In particular, when applied to a vertical low-pressure CVD apparatus, there is also the effect of reducing particles and improving the uniformity of film thickness, and as a result, significant effects such as improved yield and productivity can be expected.
(実施例) 以下、本発明の一実施例を第1図を参照して説明する。(Example) An embodiment of the present invention will be described below with reference to FIG.
但し、第1図はボート部とカバー、石英管部とを切り離
した状態を示す。However, FIG. 1 shows a state in which the boat part, cover, and quartz tube part are separated.
図中の11は、周囲にヒータ12を配設した石英製の反
応管である。この反応管11には、環状のフランジ13
.4本の支柱14を夫々介して5usiのカゴ状カバー
15が固定されている。11 in the figure is a quartz reaction tube around which a heater 12 is arranged. This reaction tube 11 has an annular flange 13.
.. A cage-shaped cover 15 of 5 usi is fixed via four pillars 14, respectively.
このカバー15には、縦方向に同一幅の複数のスリット
15a・・・が設けられている。前記カバー15内には
、複数のウェハを横並びにセットした石英製のボート1
6がエレベータ17によって反応管11内のカバー15
内に挿入される。前記エレベータ17にはエレベータ支
柱18が立てられているとともに、フランジ扉19が固
定されている。このフランジ扉19にはボート回転I(
#!20が取付けられ、この回転機構20により前記ボ
ート16を支持するボート支持台21が回転するように
なっている。This cover 15 is provided with a plurality of slits 15a having the same width in the vertical direction. Inside the cover 15 is a quartz boat 1 in which a plurality of wafers are set side by side.
6 is the cover 15 inside the reaction tube 11 by the elevator 17.
inserted within. An elevator support 18 is erected on the elevator 17, and a flange door 19 is fixed thereto. This flange door 19 has a boat rotation I (
#! 20 is attached, and this rotation mechanism 20 rotates a boat support stand 21 that supports the boat 16.
上記実施例によれば、以下に列挙する効果を有する。According to the above embodiment, the effects listed below are obtained.
■カゴ状カバー15と石英製のボート16が非接触であ
るため、パーティクルの発生を抑制できる。- Since the cage-shaped cover 15 and the quartz boat 16 are not in contact with each other, generation of particles can be suppressed.
■カゴ状カバー15と前記ボート16は独立した構造と
なっているため、ボート回転機構17によりプロセス進
行中にボート16のみを回転できる。従って、カゴ15
とウェハの相対的位置が固定されず、局所的な膜厚のバ
ラツキを抑える事ができる。(2) Since the cage-shaped cover 15 and the boat 16 have independent structures, only the boat 16 can be rotated by the boat rotation mechanism 17 while the process is in progress. Therefore, basket 15
The relative position of the wafer is not fixed, and local variations in film thickness can be suppressed.
■カバー15は反応管11の洗浄サイクルの間炉内に固
定されているため、温度を下げる事はない。そのため、
従来の如く熱膨張率の差による膜剥がれに起因するパー
ティクルの発生を考慮する必要がない。(2) Since the cover 15 is fixed in the furnace during the cleaning cycle of the reaction tube 11, the temperature does not drop. Therefore,
There is no need to consider the generation of particles due to film peeling due to differences in thermal expansion coefficients as in the conventional method.
■カバー15はSUS製のため、その加工が容易で、製
作コストを従来(石英製)と比べ著しく低減できる。- Since the cover 15 is made of SUS, it is easy to process, and the manufacturing cost can be significantly reduced compared to conventional covers (made of quartz).
なお、上記実施例では、カバーの材質としてSUSを用
いたが、これに限らず、例えばインコネルなど石英との
膨張率の差が小さいものを用いてもよい。In the above embodiment, SUS is used as the material of the cover, but the material is not limited to this, and a material having a small difference in expansion coefficient from quartz, such as Inconel, may also be used.
また、上記実施例ではカバーとして縦に同一幅のスリッ
トが入ったものを用いたが、これに限らない。例えば第
6図に示す如く下部から上部にかけて徐徐に幅が広くな
るスリット21を有した金IIのカゴ状カバー22、あ
るいは第7図に示す如く下部から上部にかけて徐徐に径
が大きくなる開口部23を有した金属製のカゴ状カバー
24を用いてよい。こうした構造のカバーを用いて成膜
をおこなえば、反応ガスが複数のウェハにより均一に供
給され、ウェハの膜厚を一層均一に形成できる。Further, in the above embodiment, a cover having vertical slits of the same width is used, but the cover is not limited to this. For example, as shown in FIG. 6, there is a basket-shaped cover 22 made of gold II with a slit 21 whose width gradually increases from the bottom to the top, or an opening 23 whose diameter gradually increases from the bottom to the top as shown in FIG. A metal cage-shaped cover 24 having a diameter may be used. If a film is formed using a cover having such a structure, the reaction gas is uniformly supplied to a plurality of wafers, and the film thickness of the wafers can be formed more uniformly.
更に、上記実施例では縦型減圧CVD装置に適用した場
合について述べたが、これに限らず、炉体を水平に配置
した一般の減圧CvD装置に対しても同様に適用できる
。Further, in the above embodiments, the case where the present invention is applied to a vertical reduced pressure CVD apparatus has been described, but the present invention is not limited to this, but can be similarly applied to a general reduced pressure CVD apparatus in which the furnace body is arranged horizontally.
[発明の効果]
以上詳述した如く本発明によれば、膜厚の均一性を損う
事なくウェハのセット、リセットの自動化を容易にする
とともにコストを低減でき、特に縦型減圧CVD装置に
適用すればパーティクルの減少、膜厚の均一性の向上を
なし得る半導体製造5A置を提供できる。[Effects of the Invention] As detailed above, according to the present invention, it is possible to easily automate the setting and resetting of wafers without impairing the uniformity of film thickness, and to reduce costs, and it is particularly suitable for vertical low pressure CVD equipment. If applied, it is possible to provide a semiconductor manufacturing 5A device that can reduce particles and improve uniformity of film thickness.
第1図は本発明の一実施例に係る縦型減圧CVD装置の
説明図、第2図は従来の縦型減圧CVD装置の説明図、
第3図は同装置による問題点の説明図、第4図は同装置
に係るカゴの斜視図、第5図はこのカゴの分割した状態
を示す斜視図、第6図及び第7図は夫々本発明装置に係
るカゴの他の実施例を示す斜視図である。
11・・・石英製の反応管、12・・・ヒータ(加熱手
段)、13・・・フランジ、14・・・支柱、15.2
2゜24・・・カバー、16・・・石英製のボード、1
7・・・エレベータ、1つ・・・フランジ扉、20・・
・ボート回転機構、21・・・ボート支持台。
出願人代理人 弁理士 鈴江武彦
第1図
第2図
第4図 第5図
第6図 嬉7図FIG. 1 is an explanatory diagram of a vertical reduced pressure CVD apparatus according to an embodiment of the present invention, FIG. 2 is an explanatory diagram of a conventional vertical reduced pressure CVD apparatus,
Fig. 3 is an explanatory diagram of problems caused by the same device, Fig. 4 is a perspective view of a basket related to the same device, Fig. 5 is a perspective view showing the divided state of this cage, and Figs. 6 and 7 are respectively FIG. 7 is a perspective view showing another embodiment of the cage according to the device of the present invention. DESCRIPTION OF SYMBOLS 11... Quartz reaction tube, 12... Heater (heating means), 13... Flange, 14... Support column, 15.2
2゜24...Cover, 16...Quartz board, 1
7...Elevator, 1...Flanged door, 20...
- Boat rotation mechanism, 21... boat support stand. Applicant's representative Patent attorney Takehiko Suzue Figure 1 Figure 2 Figure 4 Figure 5 Figure 6 Figure 7
Claims (2)
の反応管内に固定された一端側が開口された金属製のカ
ゴ状カバーと、このカゴ状カバー内に取り出し自在に挿
入されたボートとからなり、ウェハロード時にボートを
カゴ状カバーに挿入した状態で前記反応管内にセットす
ることを特徴とする半導体製造装置。(1) A reaction tube made of quartz with heating means arranged around it, a metal cage-shaped cover with one end open fixed inside the reaction tube, and a cage-shaped cover inserted into the cage-shaped cover so as to be freely removable. 1. A semiconductor manufacturing apparatus comprising: a boat; the boat is inserted into a cage-like cover and set in the reaction tube during wafer loading.
1項記載の半導体製造装置。(2) The semiconductor manufacturing apparatus according to claim 1, wherein the boat is made of quartz or ceramic.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28059486A JPS63136529A (en) | 1986-11-27 | 1986-11-27 | Production device for semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28059486A JPS63136529A (en) | 1986-11-27 | 1986-11-27 | Production device for semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63136529A true JPS63136529A (en) | 1988-06-08 |
Family
ID=17627206
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28059486A Pending JPS63136529A (en) | 1986-11-27 | 1986-11-27 | Production device for semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63136529A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5902103A (en) * | 1995-12-29 | 1999-05-11 | Kokusai Electric Co., Ltd. | Vertical furnace of a semiconductor manufacturing apparatus and a boat cover thereof |
US5938852A (en) * | 1996-05-17 | 1999-08-17 | Samsung Electronics Co., Ltd. | Cap for vertical furnace |
JP2021138593A (en) * | 2020-03-10 | 2021-09-16 | 国立大学法人広島大学 | Method for decomposing sodium oxide |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5671934A (en) * | 1979-11-16 | 1981-06-15 | Nec Home Electronics Ltd | Semiconductor manufacturing device |
JPS61190948A (en) * | 1985-02-20 | 1986-08-25 | Hitachi Micro Comput Eng Ltd | Film forming device |
-
1986
- 1986-11-27 JP JP28059486A patent/JPS63136529A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5671934A (en) * | 1979-11-16 | 1981-06-15 | Nec Home Electronics Ltd | Semiconductor manufacturing device |
JPS61190948A (en) * | 1985-02-20 | 1986-08-25 | Hitachi Micro Comput Eng Ltd | Film forming device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5902103A (en) * | 1995-12-29 | 1999-05-11 | Kokusai Electric Co., Ltd. | Vertical furnace of a semiconductor manufacturing apparatus and a boat cover thereof |
US5938852A (en) * | 1996-05-17 | 1999-08-17 | Samsung Electronics Co., Ltd. | Cap for vertical furnace |
JP2021138593A (en) * | 2020-03-10 | 2021-09-16 | 国立大学法人広島大学 | Method for decomposing sodium oxide |
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