JPS5671931A - Film formation - Google Patents

Film formation

Info

Publication number
JPS5671931A
JPS5671931A JP14972779A JP14972779A JPS5671931A JP S5671931 A JPS5671931 A JP S5671931A JP 14972779 A JP14972779 A JP 14972779A JP 14972779 A JP14972779 A JP 14972779A JP S5671931 A JPS5671931 A JP S5671931A
Authority
JP
Japan
Prior art keywords
electrodes
reaction chamber
support substances
films
decompression
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14972779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63940B2 (enExample
Inventor
Nobuo Kitajima
Kyosuke Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP14972779A priority Critical patent/JPS5671931A/ja
Publication of JPS5671931A publication Critical patent/JPS5671931A/ja
Publication of JPS63940B2 publication Critical patent/JPS63940B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H10P14/24—
    • H10P14/3411—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Photovoltaic Devices (AREA)
JP14972779A 1979-11-19 1979-11-19 Film formation Granted JPS5671931A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14972779A JPS5671931A (en) 1979-11-19 1979-11-19 Film formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14972779A JPS5671931A (en) 1979-11-19 1979-11-19 Film formation

Publications (2)

Publication Number Publication Date
JPS5671931A true JPS5671931A (en) 1981-06-15
JPS63940B2 JPS63940B2 (enExample) 1988-01-09

Family

ID=15481483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14972779A Granted JPS5671931A (en) 1979-11-19 1979-11-19 Film formation

Country Status (1)

Country Link
JP (1) JPS5671931A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821597A (en) * 1992-09-11 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6720576B1 (en) 1992-09-11 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and photoelectric conversion device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150116468A (ko) 2011-06-07 2015-10-15 아사히 가세이 파마 가부시키가이샤 고순도 ｐｔｈ 함유 동결 건조 제제 및 그의 제조 방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821597A (en) * 1992-09-11 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6720576B1 (en) 1992-09-11 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and photoelectric conversion device
US7095090B2 (en) 1992-09-11 2006-08-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device

Also Published As

Publication number Publication date
JPS63940B2 (enExample) 1988-01-09

Similar Documents

Publication Publication Date Title
JPS5310384A (en) Process and apparatus for forming coating layer by cold cathodic discharge type
JPS52143980A (en) Equipment for plasma deposition
JPS5419662A (en) Forming method of plasma cvd film
JPS5671931A (en) Film formation
JPS5236467A (en) Process for producing flat display panel
JPS5391665A (en) Plasma cvd device
JPS5671930A (en) Film formation
ES462575A1 (es) Un procedimiento para la obtencion de silano.
KR840007320A (ko) 글로방전 침착장치 및 방법
JPS54155046A (en) Method of manufacturing electrophotographic image forming material
JPS5329098A (en) Glass plate of liquid crystal panel and its production
JPS5391085A (en) Deposition apparatus of gas phase chemical reaction substance utilized plasma discharge
JPS5374372A (en) Plasma cvd device
JPS52124859A (en) Continuous vapor phase growth apparatus
JPS5381488A (en) Gas phase growth apparatus
JPS535639A (en) Production of optical fiber
JPS6459757A (en) Sealed battery
JPS6451616A (en) Manufacture of photoconductive member
JPS5348473A (en) Production of insulation film
JPS59225517A (ja) 非晶室半導体の製造方法
JPS6489320A (en) Vapor growth method
IE791251L (en) Energy production by combustion of ionized hydrogen
JPS55152544A (en) Method and apparatus for gaseous phase growth
JPS534518A (en) Production of magnetic head
JPS5357069A (en) Electronic watch