JPS5671930A - Film formation - Google Patents

Film formation

Info

Publication number
JPS5671930A
JPS5671930A JP14972679A JP14972679A JPS5671930A JP S5671930 A JPS5671930 A JP S5671930A JP 14972679 A JP14972679 A JP 14972679A JP 14972679 A JP14972679 A JP 14972679A JP S5671930 A JPS5671930 A JP S5671930A
Authority
JP
Japan
Prior art keywords
electrodes
substance
gas
pair
pipes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14972679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6239532B2 (enrdf_load_stackoverflow
Inventor
Nobuo Kitajima
Kyosuke Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP14972679A priority Critical patent/JPS5671930A/ja
Publication of JPS5671930A publication Critical patent/JPS5671930A/ja
Publication of JPS6239532B2 publication Critical patent/JPS6239532B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Photovoltaic Devices (AREA)
JP14972679A 1979-11-19 1979-11-19 Film formation Granted JPS5671930A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14972679A JPS5671930A (en) 1979-11-19 1979-11-19 Film formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14972679A JPS5671930A (en) 1979-11-19 1979-11-19 Film formation

Publications (2)

Publication Number Publication Date
JPS5671930A true JPS5671930A (en) 1981-06-15
JPS6239532B2 JPS6239532B2 (enrdf_load_stackoverflow) 1987-08-24

Family

ID=15481461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14972679A Granted JPS5671930A (en) 1979-11-19 1979-11-19 Film formation

Country Status (1)

Country Link
JP (1) JPS5671930A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56150874A (en) * 1980-04-23 1981-11-21 Teijin Ltd Method of continuously manufacturing amorphous silicon solar battery
FR2550007A1 (en) * 1983-07-29 1985-02-01 Sanyo Electric Co Method for producing a semiconducting film and photovoltaic device obtained by the method
JPS6059728A (ja) * 1983-09-12 1985-04-06 Sanyo Electric Co Ltd 半導体膜の製造方法
JPS6059729A (ja) * 1983-09-12 1985-04-06 Sanyo Electric Co Ltd 半導体膜の製造方法
JPS61116825A (ja) * 1984-11-12 1986-06-04 Kanegafuchi Chem Ind Co Ltd 多電極薄膜形成方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0382403A (ja) * 1989-08-28 1991-04-08 Matsushita Electric Works Ltd 昇降テーブル

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56150874A (en) * 1980-04-23 1981-11-21 Teijin Ltd Method of continuously manufacturing amorphous silicon solar battery
FR2550007A1 (en) * 1983-07-29 1985-02-01 Sanyo Electric Co Method for producing a semiconducting film and photovoltaic device obtained by the method
JPS6059728A (ja) * 1983-09-12 1985-04-06 Sanyo Electric Co Ltd 半導体膜の製造方法
JPS6059729A (ja) * 1983-09-12 1985-04-06 Sanyo Electric Co Ltd 半導体膜の製造方法
JPS61116825A (ja) * 1984-11-12 1986-06-04 Kanegafuchi Chem Ind Co Ltd 多電極薄膜形成方法

Also Published As

Publication number Publication date
JPS6239532B2 (enrdf_load_stackoverflow) 1987-08-24

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