JPS6489319A - Device for formation of optically pumped film - Google Patents

Device for formation of optically pumped film

Info

Publication number
JPS6489319A
JPS6489319A JP24541387A JP24541387A JPS6489319A JP S6489319 A JPS6489319 A JP S6489319A JP 24541387 A JP24541387 A JP 24541387A JP 24541387 A JP24541387 A JP 24541387A JP S6489319 A JPS6489319 A JP S6489319A
Authority
JP
Japan
Prior art keywords
light
chamber
substrates
gas
light source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24541387A
Other languages
Japanese (ja)
Inventor
Yoshinori Iida
Ryohei Miyagawa
Akihiko Furukawa
Kensaku Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP24541387A priority Critical patent/JPS6489319A/en
Publication of JPS6489319A publication Critical patent/JPS6489319A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To realize a light introducing window structure having sufficiently high light transmissible characteristic and dynamic strength characteristic and to accelerate a film forming speed by dividing a light introducing window and adjacently disposing them. CONSTITUTION:A light source 23 and a reflecting plate 24 for the light of the source are provided in a light source containing chamber 14. A plurality of openings are provided to directly see through substrates 15 at a partition plate 11 in a window structure, and light introducing windows 12 are so attached as to block the openings. A film forming chamber 13 is evacuated by an evacuation pump 22, N2 gas is fed from a line 25 into a chamber 14, material gas is then introduced from a supply unit 21 into the chamber 13, and the substrates 15 are heated by a heater 19. Then, when the light source 23 is fired and an ultraviolet light is irradiated through the windows 12 to the substrates 15, the gas is decomposed photovoltaicly in the chamber 13, and amorphous Si films are deposited on the substrates 15.
JP24541387A 1987-09-29 1987-09-29 Device for formation of optically pumped film Pending JPS6489319A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24541387A JPS6489319A (en) 1987-09-29 1987-09-29 Device for formation of optically pumped film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24541387A JPS6489319A (en) 1987-09-29 1987-09-29 Device for formation of optically pumped film

Publications (1)

Publication Number Publication Date
JPS6489319A true JPS6489319A (en) 1989-04-03

Family

ID=17133284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24541387A Pending JPS6489319A (en) 1987-09-29 1987-09-29 Device for formation of optically pumped film

Country Status (1)

Country Link
JP (1) JPS6489319A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6211081B1 (en) 1996-04-03 2001-04-03 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device in a CVD reactive chamber
JP2003045862A (en) * 2001-08-01 2003-02-14 Tokyo Electron Ltd Optical stimulation film forming device and method
JP2012256937A (en) * 2012-09-14 2012-12-27 Taiyo Nippon Sanso Corp Vapor growth device and method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6211081B1 (en) 1996-04-03 2001-04-03 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device in a CVD reactive chamber
US6383897B2 (en) 1996-04-03 2002-05-07 Kabushiki Kaisha Toshiba Apparatus for manufacturing a semiconductor device in a CVD reactive chamber
JP2003045862A (en) * 2001-08-01 2003-02-14 Tokyo Electron Ltd Optical stimulation film forming device and method
JP2012256937A (en) * 2012-09-14 2012-12-27 Taiyo Nippon Sanso Corp Vapor growth device and method

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