JPS5671898A - Nonvolatile semiconductor memory device and its testing method - Google Patents

Nonvolatile semiconductor memory device and its testing method

Info

Publication number
JPS5671898A
JPS5671898A JP14791379A JP14791379A JPS5671898A JP S5671898 A JPS5671898 A JP S5671898A JP 14791379 A JP14791379 A JP 14791379A JP 14791379 A JP14791379 A JP 14791379A JP S5671898 A JPS5671898 A JP S5671898A
Authority
JP
Japan
Prior art keywords
cell
amplifier
nonvolatile semiconductor
semiconductor memory
test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14791379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6221199B2 (enExample
Inventor
Norihisa Kitagawa
Eizaburo Iwamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Japan Ltd
Original Assignee
Texas Instruments Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Japan Ltd filed Critical Texas Instruments Japan Ltd
Priority to JP14791379A priority Critical patent/JPS5671898A/ja
Publication of JPS5671898A publication Critical patent/JPS5671898A/ja
Publication of JPS6221199B2 publication Critical patent/JPS6221199B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP14791379A 1979-11-15 1979-11-15 Nonvolatile semiconductor memory device and its testing method Granted JPS5671898A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14791379A JPS5671898A (en) 1979-11-15 1979-11-15 Nonvolatile semiconductor memory device and its testing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14791379A JPS5671898A (en) 1979-11-15 1979-11-15 Nonvolatile semiconductor memory device and its testing method

Publications (2)

Publication Number Publication Date
JPS5671898A true JPS5671898A (en) 1981-06-15
JPS6221199B2 JPS6221199B2 (enExample) 1987-05-11

Family

ID=15440929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14791379A Granted JPS5671898A (en) 1979-11-15 1979-11-15 Nonvolatile semiconductor memory device and its testing method

Country Status (1)

Country Link
JP (1) JPS5671898A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589286A (ja) * 1981-07-10 1983-01-19 Toshiba Corp 不揮発性半導体メモリ
JPS6151700A (ja) * 1984-08-22 1986-03-14 Hitachi Ltd 半導体記憶装置
JPS61172300A (ja) * 1985-01-26 1986-08-02 Toshiba Corp 半導体記憶装置
JPS62165795A (ja) * 1986-01-17 1987-07-22 Hitachi Ltd 半導体記憶装置
JPS63293800A (ja) * 1987-05-27 1988-11-30 Toshiba Corp 不揮発性半導体メモリ
JPH03120698A (ja) * 1989-10-03 1991-05-22 Toshiba Corp 半導体不揮発性記憶装置
WO1996004658A1 (en) * 1994-08-02 1996-02-15 Memory Corporation Plc Bit resolution optimising mechanism
US5936885A (en) * 1998-02-23 1999-08-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory capable of preventing erroneous inversion of data read from memory transistors

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7499308B2 (en) * 2007-03-21 2009-03-03 International Business Machines Corporation Programmable heavy-ion sensing device for accelerated DRAM soft error detection

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51140442A (en) * 1975-05-13 1976-12-03 Ncr Co Memory circuit
JPS5263637A (en) * 1975-11-20 1977-05-26 Toshiba Corp Device for non-volatile semiconductor memory

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51140442A (en) * 1975-05-13 1976-12-03 Ncr Co Memory circuit
JPS5263637A (en) * 1975-11-20 1977-05-26 Toshiba Corp Device for non-volatile semiconductor memory

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589286A (ja) * 1981-07-10 1983-01-19 Toshiba Corp 不揮発性半導体メモリ
JPS6151700A (ja) * 1984-08-22 1986-03-14 Hitachi Ltd 半導体記憶装置
JPS61172300A (ja) * 1985-01-26 1986-08-02 Toshiba Corp 半導体記憶装置
JPS62165795A (ja) * 1986-01-17 1987-07-22 Hitachi Ltd 半導体記憶装置
JPS63293800A (ja) * 1987-05-27 1988-11-30 Toshiba Corp 不揮発性半導体メモリ
JPH03120698A (ja) * 1989-10-03 1991-05-22 Toshiba Corp 半導体不揮発性記憶装置
WO1996004658A1 (en) * 1994-08-02 1996-02-15 Memory Corporation Plc Bit resolution optimising mechanism
US5936885A (en) * 1998-02-23 1999-08-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory capable of preventing erroneous inversion of data read from memory transistors

Also Published As

Publication number Publication date
JPS6221199B2 (enExample) 1987-05-11

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