JPS5670681A - Semiconductor luminous element - Google Patents

Semiconductor luminous element

Info

Publication number
JPS5670681A
JPS5670681A JP14657879A JP14657879A JPS5670681A JP S5670681 A JPS5670681 A JP S5670681A JP 14657879 A JP14657879 A JP 14657879A JP 14657879 A JP14657879 A JP 14657879A JP S5670681 A JPS5670681 A JP S5670681A
Authority
JP
Japan
Prior art keywords
semiconductor
laser
fet
layers
laser oscillation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14657879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6359277B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Tadashi Fukuzawa
Michiharu Nakamura
Susumu Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14657879A priority Critical patent/JPS5670681A/ja
Priority to US06/204,231 priority patent/US4366567A/en
Priority to EP80107031A priority patent/EP0029228B1/en
Priority to DE8080107031T priority patent/DE3072032D1/de
Priority to CA000364710A priority patent/CA1152197A/en
Publication of JPS5670681A publication Critical patent/JPS5670681A/ja
Publication of JPS6359277B2 publication Critical patent/JPS6359277B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06213—Amplitude modulation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP14657879A 1979-11-14 1979-11-14 Semiconductor luminous element Granted JPS5670681A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP14657879A JPS5670681A (en) 1979-11-14 1979-11-14 Semiconductor luminous element
US06/204,231 US4366567A (en) 1979-11-14 1980-11-05 Semiconductor laser device
EP80107031A EP0029228B1 (en) 1979-11-14 1980-11-13 Semiconductor laser device
DE8080107031T DE3072032D1 (en) 1979-11-14 1980-11-13 Semiconductor laser device
CA000364710A CA1152197A (en) 1979-11-14 1980-11-14 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14657879A JPS5670681A (en) 1979-11-14 1979-11-14 Semiconductor luminous element

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP9811188A Division JPS63301583A (ja) 1988-04-22 1988-04-22 半導体発光素子

Publications (2)

Publication Number Publication Date
JPS5670681A true JPS5670681A (en) 1981-06-12
JPS6359277B2 JPS6359277B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-11-18

Family

ID=15410858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14657879A Granted JPS5670681A (en) 1979-11-14 1979-11-14 Semiconductor luminous element

Country Status (5)

Country Link
US (1) US4366567A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0029228B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5670681A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1152197A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3072032D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821887A (ja) * 1981-08-03 1983-02-08 Agency Of Ind Science & Technol 半導体発光素子の製造方法
JPS5856489A (ja) * 1981-09-30 1983-04-04 Fujitsu Ltd 半導体発光装置
JPS5892259A (ja) * 1981-11-27 1983-06-01 Fujitsu Ltd 複合半導体装置
JPS58170054A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 光複合半導体装置
JPS596587A (ja) * 1982-07-05 1984-01-13 Agency Of Ind Science & Technol 半導体レ−ザ装置
JPS5943589A (ja) * 1982-09-03 1984-03-10 Agency Of Ind Science & Technol プレ−ナ型光電子集積回路
JPS6059791A (ja) * 1983-09-13 1985-04-06 Toyota Central Res & Dev Lab Inc 集積化光半導体装置

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3242076A1 (de) * 1982-11-13 1984-05-17 ANT Nachrichtentechnik GmbH, 7150 Backnang Optoelektronisches bauelement
US4608696A (en) * 1983-06-08 1986-08-26 Trw Inc. Integrated laser and field effect transistor
JPS61273015A (ja) * 1985-05-29 1986-12-03 Hitachi Ltd 電流切替回路
US4709370A (en) * 1985-06-17 1987-11-24 Rca Corporation Semiconductor laser driver circuit
FR2592739B1 (fr) * 1986-01-06 1988-03-18 Brillouet Francois Structure semi-conductrice monolithique d'un laser et d'un transistor a effet de champ et son procede de fabrication
DE3887567T2 (de) * 1987-05-26 1994-06-01 Toshiba Kawasaki Kk Halbleiterlaservorrichtung und Verfahren zu ihrer Herstellung.
US4996163A (en) * 1988-02-29 1991-02-26 Sumitomo Electric Industries, Ltd. Method for producing an opto-electronic integrated circuit
US5003359A (en) * 1989-12-29 1991-03-26 David Sarnoff Research Center, Inc. Optoelectronic integrated circuit
US4995049A (en) * 1990-05-29 1991-02-19 Eastman Kodak Company Optoelectronic integrated circuit
US5305338A (en) * 1990-09-25 1994-04-19 Mitsubishi Denki Kabushiki Kaisha Switch device for laser
JPH04184973A (ja) * 1990-11-19 1992-07-01 Mitsubishi Electric Corp 長波長光送信ｏｅｉｃ
JPH05346179A (ja) * 1991-12-14 1993-12-27 Sumitomo Rubber Ind Ltd タイヤ用空気充填器具
JPH0740130Y2 (ja) * 1992-12-24 1995-09-13 ハン ヤン ケミカル コーポレイション エア注入用バルブ装置
AU4695096A (en) * 1995-01-06 1996-07-24 National Aeronautics And Space Administration - Nasa Minority carrier device
DE102004038405A1 (de) * 2004-08-07 2006-03-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Quantenkaskadenlaser mit reduzierter Verlustleistung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2330310A1 (de) * 1973-06-14 1975-01-16 Siemens Ag Verfahren zur pulsmodulation von halbleiterlasern

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821887A (ja) * 1981-08-03 1983-02-08 Agency Of Ind Science & Technol 半導体発光素子の製造方法
JPS5856489A (ja) * 1981-09-30 1983-04-04 Fujitsu Ltd 半導体発光装置
JPS5892259A (ja) * 1981-11-27 1983-06-01 Fujitsu Ltd 複合半導体装置
JPS58170054A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 光複合半導体装置
JPS596587A (ja) * 1982-07-05 1984-01-13 Agency Of Ind Science & Technol 半導体レ−ザ装置
JPS5943589A (ja) * 1982-09-03 1984-03-10 Agency Of Ind Science & Technol プレ−ナ型光電子集積回路
JPS6059791A (ja) * 1983-09-13 1985-04-06 Toyota Central Res & Dev Lab Inc 集積化光半導体装置

Also Published As

Publication number Publication date
EP0029228A2 (en) 1981-05-27
US4366567A (en) 1982-12-28
JPS6359277B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-11-18
CA1152197A (en) 1983-08-16
DE3072032D1 (en) 1987-10-22
EP0029228A3 (en) 1983-03-30
EP0029228B1 (en) 1987-09-16

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