JPS5670675A - Manufacture of photoelectric converter - Google Patents

Manufacture of photoelectric converter

Info

Publication number
JPS5670675A
JPS5670675A JP14749779A JP14749779A JPS5670675A JP S5670675 A JPS5670675 A JP S5670675A JP 14749779 A JP14749779 A JP 14749779A JP 14749779 A JP14749779 A JP 14749779A JP S5670675 A JPS5670675 A JP S5670675A
Authority
JP
Japan
Prior art keywords
film
electrode
insulating film
thickness
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14749779A
Other languages
English (en)
Japanese (ja)
Other versions
JPH044757B2 (enrdf_load_stackoverflow
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP14749779A priority Critical patent/JPS5670675A/ja
Publication of JPS5670675A publication Critical patent/JPS5670675A/ja
Publication of JPH044757B2 publication Critical patent/JPH044757B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]

Landscapes

  • Photovoltaic Devices (AREA)
JP14749779A 1979-11-13 1979-11-13 Manufacture of photoelectric converter Granted JPS5670675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14749779A JPS5670675A (en) 1979-11-13 1979-11-13 Manufacture of photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14749779A JPS5670675A (en) 1979-11-13 1979-11-13 Manufacture of photoelectric converter

Publications (2)

Publication Number Publication Date
JPS5670675A true JPS5670675A (en) 1981-06-12
JPH044757B2 JPH044757B2 (enrdf_load_stackoverflow) 1992-01-29

Family

ID=15431712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14749779A Granted JPS5670675A (en) 1979-11-13 1979-11-13 Manufacture of photoelectric converter

Country Status (1)

Country Link
JP (1) JPS5670675A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743477A (en) * 1980-04-24 1982-03-11 Sanyo Electric Co Ltd Photovoltaic device
JPS5832478A (ja) * 1981-08-20 1983-02-25 Matsushita Electric Ind Co Ltd 光導電素子
JPS6220380A (ja) * 1985-07-19 1987-01-28 Shizuoka Univ 非晶質シリコンを用いた光電変換装置
JPS6247170A (ja) * 1985-08-23 1987-02-28 ハイマン　オプトエレクトロニクス　ゲゼルシヤフト　ミツト　ベシユレンクテル　ハフツング 高逆方向抵抗形ダイオ−ド装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54143086A (en) * 1978-04-28 1979-11-07 Rca Corp Schottky barrier amorphous silicon solar battery

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54143086A (en) * 1978-04-28 1979-11-07 Rca Corp Schottky barrier amorphous silicon solar battery

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743477A (en) * 1980-04-24 1982-03-11 Sanyo Electric Co Ltd Photovoltaic device
JPS5832478A (ja) * 1981-08-20 1983-02-25 Matsushita Electric Ind Co Ltd 光導電素子
JPS6220380A (ja) * 1985-07-19 1987-01-28 Shizuoka Univ 非晶質シリコンを用いた光電変換装置
JPS6247170A (ja) * 1985-08-23 1987-02-28 ハイマン　オプトエレクトロニクス　ゲゼルシヤフト　ミツト　ベシユレンクテル　ハフツング 高逆方向抵抗形ダイオ−ド装置

Also Published As

Publication number Publication date
JPH044757B2 (enrdf_load_stackoverflow) 1992-01-29

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