JPS5670630A - Manufacture of compound semiconductor by gas phase epitaxial growth - Google Patents

Manufacture of compound semiconductor by gas phase epitaxial growth

Info

Publication number
JPS5670630A
JPS5670630A JP14727879A JP14727879A JPS5670630A JP S5670630 A JPS5670630 A JP S5670630A JP 14727879 A JP14727879 A JP 14727879A JP 14727879 A JP14727879 A JP 14727879A JP S5670630 A JPS5670630 A JP S5670630A
Authority
JP
Japan
Prior art keywords
layer
growing
gas phase
hcl
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14727879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6222443B2 (https=
Inventor
Katsunori Maeda
Yoshinobu Tsujikawa
Hideki Oikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP14727879A priority Critical patent/JPS5670630A/ja
Publication of JPS5670630A publication Critical patent/JPS5670630A/ja
Publication of JPS6222443B2 publication Critical patent/JPS6222443B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
JP14727879A 1979-11-14 1979-11-14 Manufacture of compound semiconductor by gas phase epitaxial growth Granted JPS5670630A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14727879A JPS5670630A (en) 1979-11-14 1979-11-14 Manufacture of compound semiconductor by gas phase epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14727879A JPS5670630A (en) 1979-11-14 1979-11-14 Manufacture of compound semiconductor by gas phase epitaxial growth

Publications (2)

Publication Number Publication Date
JPS5670630A true JPS5670630A (en) 1981-06-12
JPS6222443B2 JPS6222443B2 (https=) 1987-05-18

Family

ID=15426587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14727879A Granted JPS5670630A (en) 1979-11-14 1979-11-14 Manufacture of compound semiconductor by gas phase epitaxial growth

Country Status (1)

Country Link
JP (1) JPS5670630A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0573270A3 (https=) * 1992-06-02 1994-02-16 Mitsubishi Chem Ind

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915991A (https=) * 1972-06-05 1974-02-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915991A (https=) * 1972-06-05 1974-02-12

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0573270A3 (https=) * 1992-06-02 1994-02-16 Mitsubishi Chem Ind

Also Published As

Publication number Publication date
JPS6222443B2 (https=) 1987-05-18

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