JPS5670630A - Manufacture of compound semiconductor by gas phase epitaxial growth - Google Patents

Manufacture of compound semiconductor by gas phase epitaxial growth

Info

Publication number
JPS5670630A
JPS5670630A JP14727879A JP14727879A JPS5670630A JP S5670630 A JPS5670630 A JP S5670630A JP 14727879 A JP14727879 A JP 14727879A JP 14727879 A JP14727879 A JP 14727879A JP S5670630 A JPS5670630 A JP S5670630A
Authority
JP
Japan
Prior art keywords
layer
growing
gas phase
hcl
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14727879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6222443B2 (enExample
Inventor
Katsunori Maeda
Yoshinobu Tsujikawa
Hideki Oikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP14727879A priority Critical patent/JPS5670630A/ja
Publication of JPS5670630A publication Critical patent/JPS5670630A/ja
Publication of JPS6222443B2 publication Critical patent/JPS6222443B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/2911—
    • H10P14/24—
    • H10P14/3421—
JP14727879A 1979-11-14 1979-11-14 Manufacture of compound semiconductor by gas phase epitaxial growth Granted JPS5670630A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14727879A JPS5670630A (en) 1979-11-14 1979-11-14 Manufacture of compound semiconductor by gas phase epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14727879A JPS5670630A (en) 1979-11-14 1979-11-14 Manufacture of compound semiconductor by gas phase epitaxial growth

Publications (2)

Publication Number Publication Date
JPS5670630A true JPS5670630A (en) 1981-06-12
JPS6222443B2 JPS6222443B2 (enExample) 1987-05-18

Family

ID=15426587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14727879A Granted JPS5670630A (en) 1979-11-14 1979-11-14 Manufacture of compound semiconductor by gas phase epitaxial growth

Country Status (1)

Country Link
JP (1) JPS5670630A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0573270A3 (enExample) * 1992-06-02 1994-02-16 Mitsubishi Chem Ind

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915991A (enExample) * 1972-06-05 1974-02-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915991A (enExample) * 1972-06-05 1974-02-12

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0573270A3 (enExample) * 1992-06-02 1994-02-16 Mitsubishi Chem Ind

Also Published As

Publication number Publication date
JPS6222443B2 (enExample) 1987-05-18

Similar Documents

Publication Publication Date Title
Yamamoto et al. Metalorganic chemical vapor deposition growth of InN for InN/Si tandem solar cell
JPS5696834A (en) Compound semiconductor epitaxial wafer and manufacture thereof
JPS649613A (en) Formation of iii-v compound semiconductor
EP0544438A2 (en) Method for selectively growing gallium-containing layers
US4252576A (en) Epitaxial wafer for use in production of light emitting diode
CA1217880A (en) Process for diffusing impurities into a semiconductor body
JPS6453411A (en) Manufacture of semiconductor thin film
JPH01179411A (ja) ３−５族化合物半導体気相成長方法
JPS5670630A (en) Manufacture of compound semiconductor by gas phase epitaxial growth
US4216037A (en) Method for manufacturing a heterojunction semiconductor device by disappearing intermediate layer
KR870003554A (ko) 비소화칼륨 단결정 박막의 기상 에피택셜 성장방법
JPS5577131A (en) Vapor phase growth of compound semiconductor epitaxial film
JPS6437832A (en) Method of growing compound semiconductor crystal
JPS61106497A (ja) 燐化砒化ガリウムエピタキシヤル膜の成長方法
JPS5577130A (en) Gaseous phase growing method of semiconductor epitaxial film of low carrier-density compound
JPS5649520A (en) Vapor growth of compound semiconductor
JPS5618000A (en) Vapor phase growing method for 3-5 group compound semiconductor
JPS54114178A (en) Vacuum epitaxial growing method
KR950029246A (ko) 화합물 반도체의 선택적 결정 성장방법
JPS61145823A (ja) 分子線エピタキシ成長法
JPH01179795A (ja) ３−５族化合物半導体気相成長方法
JPS56105626A (en) Compound semiconductor thin film single crystal
JPS56118329A (en) Vapor phase epitaxial growth method for compound semiconductor monocrystalling thin film
Shang et al. InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source
JPS5673427A (en) Manufacture of gallium arsenide epitaxial wafer