JPS5669881A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS5669881A JPS5669881A JP14440279A JP14440279A JPS5669881A JP S5669881 A JPS5669881 A JP S5669881A JP 14440279 A JP14440279 A JP 14440279A JP 14440279 A JP14440279 A JP 14440279A JP S5669881 A JPS5669881 A JP S5669881A
- Authority
- JP
- Japan
- Prior art keywords
- sections
- conductive regions
- wide
- beltlike
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14440279A JPS5669881A (en) | 1979-11-09 | 1979-11-09 | Semiconductor laser device |
US06/204,012 US4369513A (en) | 1979-11-09 | 1980-10-31 | Semiconductor laser device |
EP80106788A EP0029167B1 (en) | 1979-11-09 | 1980-11-04 | Semiconductor laser device |
DE8080106788T DE3068243D1 (en) | 1979-11-09 | 1980-11-04 | Semiconductor laser device |
CA000364254A CA1152623A (en) | 1979-11-09 | 1980-11-07 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14440279A JPS5669881A (en) | 1979-11-09 | 1979-11-09 | Semiconductor laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5669881A true JPS5669881A (en) | 1981-06-11 |
JPS5721876B2 JPS5721876B2 (ja) | 1982-05-10 |
Family
ID=15361326
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14440279A Granted JPS5669881A (en) | 1979-11-09 | 1979-11-09 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5669881A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014082263A (ja) * | 2012-10-15 | 2014-05-08 | Kyoto Univ | 半導体レーザ素子 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5721876B1 (ja) | 2014-02-26 | 2015-05-20 | グリー株式会社 | ゲームプログラム、ゲーム処理方法および情報処理装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51100686A (ja) * | 1975-03-03 | 1976-09-06 | Nippon Telegraph & Telephone | Handotaisochi |
JPS5373090A (en) * | 1976-12-13 | 1978-06-29 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
-
1979
- 1979-11-09 JP JP14440279A patent/JPS5669881A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51100686A (ja) * | 1975-03-03 | 1976-09-06 | Nippon Telegraph & Telephone | Handotaisochi |
JPS5373090A (en) * | 1976-12-13 | 1978-06-29 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014082263A (ja) * | 2012-10-15 | 2014-05-08 | Kyoto Univ | 半導体レーザ素子 |
Also Published As
Publication number | Publication date |
---|---|
JPS5721876B2 (ja) | 1982-05-10 |
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