JPS5669838A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5669838A
JPS5669838A JP14574879A JP14574879A JPS5669838A JP S5669838 A JPS5669838 A JP S5669838A JP 14574879 A JP14574879 A JP 14574879A JP 14574879 A JP14574879 A JP 14574879A JP S5669838 A JPS5669838 A JP S5669838A
Authority
JP
Japan
Prior art keywords
substrate
reinforcing members
fixed
yielded
heat radiating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14574879A
Other languages
Japanese (ja)
Inventor
Tsutomu Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14574879A priority Critical patent/JPS5669838A/en
Publication of JPS5669838A publication Critical patent/JPS5669838A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To prevent the yield of cracks in a substrate, in the case reinforcing members comprising Si is provided around the periphery of the surface on the opposite side of the heat radiating surface of the Si substrate, by performing heat treatment with a silica film being located in-between and fixing the reinforcing members. CONSTITUTION:The heat radiating body 3 comprising Mo, W, or the like is fixed to one surface 2 of the positively slanted Si substrate 1 wherein the side surface 5 is slanted at an angle less than 90 deg. by using brazing material 4 such as Al and the like. Then, reinforcing members 7 also comprising Si are fixed to the expanded parts of the periphery of the other surface 6 in order to reinforce the parts. At this time, a silica film 10 is attached to said parts, the reinforcing members 7 are placed thereon, the heat treatment is performed in the oxidizing or inactive atmosphere, and the substrate 1 and the reinforcing members 7 are fixed with SiO2 being located in-between. In this constitution, stress due to SiO2 is not yielded on the surface to which the members 7 are fixed. Stress is yielded only on the side of the heat radiating body 3, cracks are not yielded on the substrate 1, and the yield rate and the withstanding voltage can be enhanced.
JP14574879A 1979-11-09 1979-11-09 Manufacture of semiconductor device Pending JPS5669838A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14574879A JPS5669838A (en) 1979-11-09 1979-11-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14574879A JPS5669838A (en) 1979-11-09 1979-11-09 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5669838A true JPS5669838A (en) 1981-06-11

Family

ID=15392233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14574879A Pending JPS5669838A (en) 1979-11-09 1979-11-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5669838A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0192488A2 (en) * 1985-02-20 1986-08-27 Kabushiki Kaisha Toshiba Semiconductor sensor and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0192488A2 (en) * 1985-02-20 1986-08-27 Kabushiki Kaisha Toshiba Semiconductor sensor and method of manufacturing the same

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