JPS5666064A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5666064A
JPS5666064A JP14178479A JP14178479A JPS5666064A JP S5666064 A JPS5666064 A JP S5666064A JP 14178479 A JP14178479 A JP 14178479A JP 14178479 A JP14178479 A JP 14178479A JP S5666064 A JPS5666064 A JP S5666064A
Authority
JP
Japan
Prior art keywords
junction
capacitance
film
substrate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14178479A
Other languages
Japanese (ja)
Other versions
JPS6243347B2 (en
Inventor
Hiroshi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14178479A priority Critical patent/JPS5666064A/en
Publication of JPS5666064A publication Critical patent/JPS5666064A/en
Publication of JPS6243347B2 publication Critical patent/JPS6243347B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To make the junction capacitance large when a junction face is to be formed in a semiconductor device by a method wherein the face thereof is constituted of shallow parts and deep parts to enlarge the junction area per unit area. CONSTITUTION:When the MOS dynamic RAM is to be formed, a thick separating oxide film 3 is formed at the circumference of a P type Si substrate 1, and an N<+> type region 2 to form a bit line is formed by diffusion in the substrate 1 being surrounded with the film. The junction capacitance consisting of a P<+> type region 4 and an adjacent N<+> type region 5 is formed in the substrate 1 locating between the film 3 and the region being close to the film 3, and the second polycrystalline Si layer 7 is formed on it with the intermediary of the second oxide film 6 being located between them. Then the second polycrystalline Si layer 9 is adhered thereon between the film 3 and the region 2 via the first oxide film 8 between them to use it as gate capacitance. In this consitution, the junction capacitance is consisted of shallow junction faces 10a and deep junction faces 10b forming an uneven face to enlarge the junction area, and the large cell capacitance consisting of the sum of the junction capacitance and the gate capacitance is obtained.
JP14178479A 1979-10-31 1979-10-31 Semiconductor device Granted JPS5666064A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14178479A JPS5666064A (en) 1979-10-31 1979-10-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14178479A JPS5666064A (en) 1979-10-31 1979-10-31 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5666064A true JPS5666064A (en) 1981-06-04
JPS6243347B2 JPS6243347B2 (en) 1987-09-12

Family

ID=15300076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14178479A Granted JPS5666064A (en) 1979-10-31 1979-10-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5666064A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037765A (en) * 1983-08-11 1985-02-27 Nec Corp Semiconductor device and manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037765A (en) * 1983-08-11 1985-02-27 Nec Corp Semiconductor device and manufacture thereof
JPH0367348B2 (en) * 1983-08-11 1991-10-22 Nippon Electric Co

Also Published As

Publication number Publication date
JPS6243347B2 (en) 1987-09-12

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