JPS5666063A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5666063A
JPS5666063A JP14178279A JP14178279A JPS5666063A JP S5666063 A JPS5666063 A JP S5666063A JP 14178279 A JP14178279 A JP 14178279A JP 14178279 A JP14178279 A JP 14178279A JP S5666063 A JPS5666063 A JP S5666063A
Authority
JP
Japan
Prior art keywords
film
polycrystalline
substrate
oxide film
gate oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14178279A
Other languages
Japanese (ja)
Other versions
JPS6152579B2 (en
Inventor
Masahiko Denda
Shinichi Sato
Natsuo Tsubouchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14178279A priority Critical patent/JPS5666063A/en
Publication of JPS5666063A publication Critical patent/JPS5666063A/en
Publication of JPS6152579B2 publication Critical patent/JPS6152579B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To prevent the influence of alpha rays irradiating from the outside to a semiconductor device by a method wherein an oxide film is formed corresponding to a capacitor region on the semiconductor substrate, the film is covered with a polycrystalline Si layer of the same conductive type with the substrate, and a polycrystalline Si gate electrode is provided at one side face installing a gate oxide film between them. CONSTITUTION:The SiO2 film 12 is formed corresponding to the capacitor region on the P type Si substrate 11, the exposed upper surface and the side faces are surrounded with the polycrystalline Si film 14 and the same impurity with the substrate 11 is doped therein to impart the conductively. The first gate oxide film 15 is formed covering it, and the first polycrystalline Si film 16 is adhered on it. The gate electrode 18 consisting of the second polycrystalline Si film 17 is provided on its one side face with the entermediary of the second gate oxide film 17, and an N<+> type region 19 is diffusion formed in the substrate to be in contact with the electrode 18 to form a memory cell. By this constitution, even if electrons or holes may be generated by the irradiation of alpha rays from the outside, they can not reach the cell.
JP14178279A 1979-10-31 1979-10-31 Manufacture of semiconductor device Granted JPS5666063A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14178279A JPS5666063A (en) 1979-10-31 1979-10-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14178279A JPS5666063A (en) 1979-10-31 1979-10-31 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5666063A true JPS5666063A (en) 1981-06-04
JPS6152579B2 JPS6152579B2 (en) 1986-11-13

Family

ID=15300035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14178279A Granted JPS5666063A (en) 1979-10-31 1979-10-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5666063A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS503780A (en) * 1973-05-15 1975-01-16

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS503780A (en) * 1973-05-15 1975-01-16

Also Published As

Publication number Publication date
JPS6152579B2 (en) 1986-11-13

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