JPS5665973A - Vapor depositing method - Google Patents

Vapor depositing method

Info

Publication number
JPS5665973A
JPS5665973A JP14129279A JP14129279A JPS5665973A JP S5665973 A JPS5665973 A JP S5665973A JP 14129279 A JP14129279 A JP 14129279A JP 14129279 A JP14129279 A JP 14129279A JP S5665973 A JPS5665973 A JP S5665973A
Authority
JP
Japan
Prior art keywords
laser beam
defective
deposited
deposition
control circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14129279A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5761826B2 (enrdf_load_stackoverflow
Inventor
Koichi Kajiyama
Tomoaki Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Komatsu Ltd
Original Assignee
Komatsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Ltd filed Critical Komatsu Ltd
Priority to JP14129279A priority Critical patent/JPS5665973A/ja
Publication of JPS5665973A publication Critical patent/JPS5665973A/ja
Publication of JPS5761826B2 publication Critical patent/JPS5761826B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
JP14129279A 1979-11-02 1979-11-02 Vapor depositing method Granted JPS5665973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14129279A JPS5665973A (en) 1979-11-02 1979-11-02 Vapor depositing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14129279A JPS5665973A (en) 1979-11-02 1979-11-02 Vapor depositing method

Publications (2)

Publication Number Publication Date
JPS5665973A true JPS5665973A (en) 1981-06-04
JPS5761826B2 JPS5761826B2 (enrdf_load_stackoverflow) 1982-12-27

Family

ID=15288485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14129279A Granted JPS5665973A (en) 1979-11-02 1979-11-02 Vapor depositing method

Country Status (1)

Country Link
JP (1) JPS5665973A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188673A (en) * 1981-05-14 1982-11-19 Toshiba Corp Formation of thin film by vacuum
JPS58112375A (ja) * 1981-12-25 1983-07-04 Fuji Electric Corp Res & Dev Ltd 光起電力装置の製造方法
JPS58199857A (ja) * 1982-05-04 1983-11-21 マイクル・ポ−ル・ニアリ− 化学的方法
JPS6050166A (ja) * 1983-08-26 1985-03-19 Res Dev Corp Of Japan プラズマ蒸着法及びその装置
JPS60162776A (ja) * 1984-02-01 1985-08-24 Matsushita Electric Ind Co Ltd プラズマ処理装置
JPS61139667A (ja) * 1984-12-08 1986-06-26 Inoue Japax Res Inc 炭化珪素薄膜の形成方法
JPS61253367A (ja) * 1985-05-04 1986-11-11 Inoue Japax Res Inc 気相成長法
JPS6277474A (ja) * 1985-09-30 1987-04-09 Shimadzu Corp Ｃｖｄ装置
CN115917033A (zh) * 2020-06-30 2023-04-04 马克思-普朗克科学促进协会 控制源材料的蒸发速率的方法、测量在源表面上反射的电磁辐射的检测器及利用电磁辐射进行热蒸发的系统

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02116723U (enrdf_load_stackoverflow) * 1989-03-07 1990-09-19

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188673A (en) * 1981-05-14 1982-11-19 Toshiba Corp Formation of thin film by vacuum
JPS58112375A (ja) * 1981-12-25 1983-07-04 Fuji Electric Corp Res & Dev Ltd 光起電力装置の製造方法
JPS58199857A (ja) * 1982-05-04 1983-11-21 マイクル・ポ−ル・ニアリ− 化学的方法
JPS6050166A (ja) * 1983-08-26 1985-03-19 Res Dev Corp Of Japan プラズマ蒸着法及びその装置
JPS60162776A (ja) * 1984-02-01 1985-08-24 Matsushita Electric Ind Co Ltd プラズマ処理装置
JPS61139667A (ja) * 1984-12-08 1986-06-26 Inoue Japax Res Inc 炭化珪素薄膜の形成方法
JPS61253367A (ja) * 1985-05-04 1986-11-11 Inoue Japax Res Inc 気相成長法
JPS6277474A (ja) * 1985-09-30 1987-04-09 Shimadzu Corp Ｃｖｄ装置
CN115917033A (zh) * 2020-06-30 2023-04-04 马克思-普朗克科学促进协会 控制源材料的蒸发速率的方法、测量在源表面上反射的电磁辐射的检测器及利用电磁辐射进行热蒸发的系统

Also Published As

Publication number Publication date
JPS5761826B2 (enrdf_load_stackoverflow) 1982-12-27

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