JPS566452A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS566452A
JPS566452A JP8112579A JP8112579A JPS566452A JP S566452 A JPS566452 A JP S566452A JP 8112579 A JP8112579 A JP 8112579A JP 8112579 A JP8112579 A JP 8112579A JP S566452 A JPS566452 A JP S566452A
Authority
JP
Japan
Prior art keywords
contact hole
insulator film
electrode
substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8112579A
Other languages
Japanese (ja)
Inventor
Minoru Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8112579A priority Critical patent/JPS566452A/en
Publication of JPS566452A publication Critical patent/JPS566452A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve the reliability by making the insulator film thinner close to the contact hole and thicker at the electrode wire section when the electrode wiring is formed on the impurity layer of the semiconductor elements formed separately passing through the contact hole provided on the insulator film. CONSTITUTION:A field SiO2 film 2 is provided on the P<->-type Si substrate 1 to separate elements and the gate insulator film 3 and the Si gate electrode 4 is formed to make the n<+>-type source 5, the drain 6 and the wire layer 8 in a self-aligning manner. Then, the SiO2 film 9 is entirely formed by CVD method and except for the contact hole forming region, a BPSG films is formed selectively. After the formation of the contact hole 11, the electrode wire 121 and 122 of Al are formed. This facilitates the mounting of the electrodes between the wires and the substrate and the wires themselves without larger floating capacity and lower voltage resistance thereby enabling finer division and higher density.
JP8112579A 1979-06-27 1979-06-27 Production of semiconductor device Pending JPS566452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8112579A JPS566452A (en) 1979-06-27 1979-06-27 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8112579A JPS566452A (en) 1979-06-27 1979-06-27 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS566452A true JPS566452A (en) 1981-01-23

Family

ID=13737663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8112579A Pending JPS566452A (en) 1979-06-27 1979-06-27 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS566452A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6261358A (en) * 1985-09-11 1987-03-18 Mitsubishi Electric Corp Semiconductor device
JPS6392028A (en) * 1986-10-06 1988-04-22 Nec Corp Semiconductor device
JPH05198790A (en) * 1992-11-20 1993-08-06 Mitsubishi Electric Corp Semiconductor device
JPH0669193A (en) * 1991-11-15 1994-03-11 American Teleph & Telegr Co <Att> Manufacture of semiconductor integrated circuit
JPH0723487U (en) * 1990-12-06 1995-05-02 服部ヒーテイング工業株式会社 Bedding for bathroom

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6261358A (en) * 1985-09-11 1987-03-18 Mitsubishi Electric Corp Semiconductor device
JPS6392028A (en) * 1986-10-06 1988-04-22 Nec Corp Semiconductor device
JPH0723487U (en) * 1990-12-06 1995-05-02 服部ヒーテイング工業株式会社 Bedding for bathroom
JPH0669193A (en) * 1991-11-15 1994-03-11 American Teleph & Telegr Co <Att> Manufacture of semiconductor integrated circuit
JPH05198790A (en) * 1992-11-20 1993-08-06 Mitsubishi Electric Corp Semiconductor device

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