JPS566452A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS566452A JPS566452A JP8112579A JP8112579A JPS566452A JP S566452 A JPS566452 A JP S566452A JP 8112579 A JP8112579 A JP 8112579A JP 8112579 A JP8112579 A JP 8112579A JP S566452 A JPS566452 A JP S566452A
- Authority
- JP
- Japan
- Prior art keywords
- contact hole
- insulator film
- electrode
- substrate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To improve the reliability by making the insulator film thinner close to the contact hole and thicker at the electrode wire section when the electrode wiring is formed on the impurity layer of the semiconductor elements formed separately passing through the contact hole provided on the insulator film. CONSTITUTION:A field SiO2 film 2 is provided on the P<->-type Si substrate 1 to separate elements and the gate insulator film 3 and the Si gate electrode 4 is formed to make the n<+>-type source 5, the drain 6 and the wire layer 8 in a self-aligning manner. Then, the SiO2 film 9 is entirely formed by CVD method and except for the contact hole forming region, a BPSG films is formed selectively. After the formation of the contact hole 11, the electrode wire 121 and 122 of Al are formed. This facilitates the mounting of the electrodes between the wires and the substrate and the wires themselves without larger floating capacity and lower voltage resistance thereby enabling finer division and higher density.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8112579A JPS566452A (en) | 1979-06-27 | 1979-06-27 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8112579A JPS566452A (en) | 1979-06-27 | 1979-06-27 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS566452A true JPS566452A (en) | 1981-01-23 |
Family
ID=13737663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8112579A Pending JPS566452A (en) | 1979-06-27 | 1979-06-27 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS566452A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6261358A (en) * | 1985-09-11 | 1987-03-18 | Mitsubishi Electric Corp | Semiconductor device |
JPS6392028A (en) * | 1986-10-06 | 1988-04-22 | Nec Corp | Semiconductor device |
JPH05198790A (en) * | 1992-11-20 | 1993-08-06 | Mitsubishi Electric Corp | Semiconductor device |
JPH0669193A (en) * | 1991-11-15 | 1994-03-11 | American Teleph & Telegr Co <Att> | Manufacture of semiconductor integrated circuit |
JPH0723487U (en) * | 1990-12-06 | 1995-05-02 | 服部ヒーテイング工業株式会社 | Bedding for bathroom |
-
1979
- 1979-06-27 JP JP8112579A patent/JPS566452A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6261358A (en) * | 1985-09-11 | 1987-03-18 | Mitsubishi Electric Corp | Semiconductor device |
JPS6392028A (en) * | 1986-10-06 | 1988-04-22 | Nec Corp | Semiconductor device |
JPH0723487U (en) * | 1990-12-06 | 1995-05-02 | 服部ヒーテイング工業株式会社 | Bedding for bathroom |
JPH0669193A (en) * | 1991-11-15 | 1994-03-11 | American Teleph & Telegr Co <Att> | Manufacture of semiconductor integrated circuit |
JPH05198790A (en) * | 1992-11-20 | 1993-08-06 | Mitsubishi Electric Corp | Semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6451665A (en) | Semiconductor device | |
JPS57143858A (en) | Semiconductor integrated circuit | |
JPS56169368A (en) | High withstand voltage mos field effect semiconductor device | |
DE3472036D1 (en) | Small area thin film transistor | |
JPS56125868A (en) | Thin-film semiconductor device | |
JPS56126936A (en) | Semiconductor device and production thereof | |
JPS566452A (en) | Production of semiconductor device | |
JPS55151363A (en) | Mos semiconductor device and fabricating method of the same | |
JPS6489560A (en) | Semiconductor memory | |
JPS6484659A (en) | Manufacture of semiconductor device | |
JPS5764965A (en) | Semiconductor device | |
JPS5740967A (en) | Integrated circuit device | |
JPS6151961A (en) | Complementary type mos semiconductor device | |
JPS5756950A (en) | Manufacture of insulated gate tupe semiconductor integrated ciucuit device | |
JPS6437058A (en) | Insulated-gate field-effect transistor | |
JPS57147252A (en) | Multilayer wiring method | |
JPS56104446A (en) | Semiconductor device | |
JPS57103350A (en) | Manufacture of semiconductor memory | |
JPS5745280A (en) | Wiring method of complementary insulation gate type field effect semiconductor device | |
JPS62113467A (en) | Semiconductor memory device | |
JPS57199264A (en) | Semiconductor memory | |
JPS57172771A (en) | Semiconductor memory device | |
JPS5629369A (en) | Insulated gate type field effect transistor | |
EP0326187A3 (en) | Power mosfet structure | |
JPS55151365A (en) | Insulated gate type transistor and semiconductor integrated circuit |