JPS566448A - Mos type integrated circuit device - Google Patents
Mos type integrated circuit deviceInfo
- Publication number
- JPS566448A JPS566448A JP8192579A JP8192579A JPS566448A JP S566448 A JPS566448 A JP S566448A JP 8192579 A JP8192579 A JP 8192579A JP 8192579 A JP8192579 A JP 8192579A JP S566448 A JPS566448 A JP S566448A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicone
- film
- layer
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8192579A JPS566448A (en) | 1979-06-28 | 1979-06-28 | Mos type integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8192579A JPS566448A (en) | 1979-06-28 | 1979-06-28 | Mos type integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS566448A true JPS566448A (en) | 1981-01-23 |
Family
ID=13760030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8192579A Pending JPS566448A (en) | 1979-06-28 | 1979-06-28 | Mos type integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS566448A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6136974A (ja) * | 1984-07-30 | 1986-02-21 | Matsushita Electronics Corp | Mos型半導体装置の製造方法 |
JPH04179725A (ja) * | 1990-11-14 | 1992-06-26 | Ohbayashi Corp | 鋼管矢板工法における継手部の止水工法 |
-
1979
- 1979-06-28 JP JP8192579A patent/JPS566448A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6136974A (ja) * | 1984-07-30 | 1986-02-21 | Matsushita Electronics Corp | Mos型半導体装置の製造方法 |
JPH0527995B2 (ja) * | 1984-07-30 | 1993-04-22 | Matsushita Electronics Corp | |
JPH04179725A (ja) * | 1990-11-14 | 1992-06-26 | Ohbayashi Corp | 鋼管矢板工法における継手部の止水工法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1444386A (en) | Integrated circuit fabrication processes | |
GB1517242A (en) | Integrated circuits | |
JPS55160444A (en) | Manufacture of semiconductor device | |
JPS5799777A (en) | Metal oxide semiconductor type semiconductor device | |
EP0029552A3 (en) | Method for producing a semiconductor device | |
JPS566448A (en) | Mos type integrated circuit device | |
JPS57191539A (en) | Semiconductor ion sensor | |
JPS57204146A (en) | Manufacture of semiconductor device | |
JPS56157044A (en) | Insulating isolation of semiconductor element | |
JPS5763842A (en) | Preparation of semiconductor integrated circuit | |
JPS57134956A (en) | Manufacture of semiconductor integrated circuit | |
JPS6457641A (en) | Manufacture of semiconductor device | |
JPS6453559A (en) | Manufacture of semiconductor device | |
JPS56133844A (en) | Semiconductor device | |
JPS52117079A (en) | Preparation of semiconductor device | |
JPS55132062A (en) | Semiconductor memory device | |
JPS54143076A (en) | Semiconductor device and its manufacture | |
KR890004415A (ko) | 반도체장치의 소자 분리방법 | |
JPS5635458A (en) | Manufacture of integrated circuit device | |
JPS5447488A (en) | Production of silicon gate type mis semiconductor device | |
JPS55111145A (en) | Manufacturing method of semiconductor device | |
JPS6421940A (en) | Manufacture of semiconductor device | |
JPS5679446A (en) | Production of semiconductor device | |
JPS5670669A (en) | Longitudinal semiconductor device | |
JPS54115086A (en) | Manufacture for semiconductor integrated circuit |