JPS5660310A - Film thickness control device - Google Patents
Film thickness control deviceInfo
- Publication number
- JPS5660310A JPS5660310A JP13685479A JP13685479A JPS5660310A JP S5660310 A JPS5660310 A JP S5660310A JP 13685479 A JP13685479 A JP 13685479A JP 13685479 A JP13685479 A JP 13685479A JP S5660310 A JPS5660310 A JP S5660310A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- dielectric
- light
- film
- reflection factor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Length Measuring Devices By Optical Means (AREA)
Abstract
PURPOSE: To control a thin film with a high precision, by arranging fibers in both sides of a base having the refractive index larger than that of the dielectric thin film in the device forming the dielectric thin film and by detecting light quantities passing through these fibers.
CONSTITUTION: According as dielectric thin film 11 is stuck to base 10, the reflection factor is lowered and the transmitting light is increased. When the film thickness is λ/4n (λ and n are the wave length of the light and the refractive index of the dielectric respectively), for example, when the dielectric is SiO2 and the thickness is approximately 1,400Å, the reflection factor becomes minimum and the transmitting light becomes maximum. Continuously, the transmitting light is reduced, and the light output is returned to the initial light output point, namely, the initial reflection factor for sticking of no thin film. At this point, the film thickness is λ/2n and (d) is 2,800Å approximately to indicate that the passivation film is reflection-coated on the reflective face of the semiconductor laser. As a result, the thin film can be monitored continuously to improve the reliability of the passivation process.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13685479A JPS5660310A (en) | 1979-10-23 | 1979-10-23 | Film thickness control device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13685479A JPS5660310A (en) | 1979-10-23 | 1979-10-23 | Film thickness control device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5660310A true JPS5660310A (en) | 1981-05-25 |
JPS6219683B2 JPS6219683B2 (en) | 1987-04-30 |
Family
ID=15185051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13685479A Granted JPS5660310A (en) | 1979-10-23 | 1979-10-23 | Film thickness control device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5660310A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0693403A (en) * | 1992-09-11 | 1994-04-05 | Nippon Steel Corp | Method for determining condition for film formation |
-
1979
- 1979-10-23 JP JP13685479A patent/JPS5660310A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0693403A (en) * | 1992-09-11 | 1994-04-05 | Nippon Steel Corp | Method for determining condition for film formation |
Also Published As
Publication number | Publication date |
---|---|
JPS6219683B2 (en) | 1987-04-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5360651A (en) | Semiconductor laser with optical fibers | |
JPS57195207A (en) | Light absorbing film | |
EP0367682A3 (en) | Optical switch | |
JPS5660310A (en) | Film thickness control device | |
JPS57132114A (en) | Dividing method of light flux | |
JPS5746203A (en) | Optical switch | |
NZ232108A (en) | Semiconductor laser amplifier | |
US3804487A (en) | Optical input coupler for a light guide | |
JPS5727213A (en) | Dielectric multilayer film mirror | |
JPS55108790A (en) | Semiconductor luminous device | |
JPS5745501A (en) | Reflection preventing film of metal | |
JPS53128288A (en) | Semiconductor laser element and production of the same | |
JPS5341976A (en) | Measuring method of thickness of semiconducjtor wafer | |
JPS6449282A (en) | Integrated circuit device with built-in photodiode | |
JPS54161349A (en) | Three-dimensional cross type waveguide passage | |
JPS5376779A (en) | Semiconductor laser device | |
CA2173564A1 (en) | Method of and Device for Measuring the Refractive Index of Wafers of Vitreous Material | |
JPS55163942A (en) | Reader for original | |
JPS5779902A (en) | Fixing jig for optical transmission line | |
JPS5511342A (en) | Laser diode single mode oscillation device | |
JPS52153453A (en) | Optical fiber | |
JPS5779624A (en) | Manufacture of semiconductor device | |
JPS57170585A (en) | Semiconductor laser device | |
JPS537252A (en) | Multi-layer reflection preventive film | |
JPS5696876A (en) | Semiconductor light receiving element |