JPS5660310A - Film thickness control device - Google Patents

Film thickness control device

Info

Publication number
JPS5660310A
JPS5660310A JP13685479A JP13685479A JPS5660310A JP S5660310 A JPS5660310 A JP S5660310A JP 13685479 A JP13685479 A JP 13685479A JP 13685479 A JP13685479 A JP 13685479A JP S5660310 A JPS5660310 A JP S5660310A
Authority
JP
Japan
Prior art keywords
thin film
dielectric
light
film
reflection factor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13685479A
Other languages
Japanese (ja)
Other versions
JPS6219683B2 (en
Inventor
Yoichi Osawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13685479A priority Critical patent/JPS5660310A/en
Publication of JPS5660310A publication Critical patent/JPS5660310A/en
Publication of JPS6219683B2 publication Critical patent/JPS6219683B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Length Measuring Devices By Optical Means (AREA)

Abstract

PURPOSE: To control a thin film with a high precision, by arranging fibers in both sides of a base having the refractive index larger than that of the dielectric thin film in the device forming the dielectric thin film and by detecting light quantities passing through these fibers.
CONSTITUTION: According as dielectric thin film 11 is stuck to base 10, the reflection factor is lowered and the transmitting light is increased. When the film thickness is λ/4n (λ and n are the wave length of the light and the refractive index of the dielectric respectively), for example, when the dielectric is SiO2 and the thickness is approximately 1,400Å, the reflection factor becomes minimum and the transmitting light becomes maximum. Continuously, the transmitting light is reduced, and the light output is returned to the initial light output point, namely, the initial reflection factor for sticking of no thin film. At this point, the film thickness is λ/2n and (d) is 2,800Å approximately to indicate that the passivation film is reflection-coated on the reflective face of the semiconductor laser. As a result, the thin film can be monitored continuously to improve the reliability of the passivation process.
COPYRIGHT: (C)1981,JPO&Japio
JP13685479A 1979-10-23 1979-10-23 Film thickness control device Granted JPS5660310A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13685479A JPS5660310A (en) 1979-10-23 1979-10-23 Film thickness control device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13685479A JPS5660310A (en) 1979-10-23 1979-10-23 Film thickness control device

Publications (2)

Publication Number Publication Date
JPS5660310A true JPS5660310A (en) 1981-05-25
JPS6219683B2 JPS6219683B2 (en) 1987-04-30

Family

ID=15185051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13685479A Granted JPS5660310A (en) 1979-10-23 1979-10-23 Film thickness control device

Country Status (1)

Country Link
JP (1) JPS5660310A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0693403A (en) * 1992-09-11 1994-04-05 Nippon Steel Corp Method for determining condition for film formation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0693403A (en) * 1992-09-11 1994-04-05 Nippon Steel Corp Method for determining condition for film formation

Also Published As

Publication number Publication date
JPS6219683B2 (en) 1987-04-30

Similar Documents

Publication Publication Date Title
JPS5360651A (en) Semiconductor laser with optical fibers
JPS57195207A (en) Light absorbing film
EP0367682A3 (en) Optical switch
JPS5660310A (en) Film thickness control device
JPS57132114A (en) Dividing method of light flux
JPS5746203A (en) Optical switch
NZ232108A (en) Semiconductor laser amplifier
US3804487A (en) Optical input coupler for a light guide
JPS5727213A (en) Dielectric multilayer film mirror
JPS55108790A (en) Semiconductor luminous device
JPS5745501A (en) Reflection preventing film of metal
JPS53128288A (en) Semiconductor laser element and production of the same
JPS5341976A (en) Measuring method of thickness of semiconducjtor wafer
JPS6449282A (en) Integrated circuit device with built-in photodiode
JPS54161349A (en) Three-dimensional cross type waveguide passage
JPS5376779A (en) Semiconductor laser device
CA2173564A1 (en) Method of and Device for Measuring the Refractive Index of Wafers of Vitreous Material
JPS55163942A (en) Reader for original
JPS5779902A (en) Fixing jig for optical transmission line
JPS5511342A (en) Laser diode single mode oscillation device
JPS52153453A (en) Optical fiber
JPS5779624A (en) Manufacture of semiconductor device
JPS57170585A (en) Semiconductor laser device
JPS537252A (en) Multi-layer reflection preventive film
JPS5696876A (en) Semiconductor light receiving element