JPS5658226A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5658226A
JPS5658226A JP13457679A JP13457679A JPS5658226A JP S5658226 A JPS5658226 A JP S5658226A JP 13457679 A JP13457679 A JP 13457679A JP 13457679 A JP13457679 A JP 13457679A JP S5658226 A JPS5658226 A JP S5658226A
Authority
JP
Japan
Prior art keywords
layer
impurities
activated
ion
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13457679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6327852B2 (enrdf_load_stackoverflow
Inventor
Hideki Yakida
Takeshi Konuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP13457679A priority Critical patent/JPS5658226A/ja
Publication of JPS5658226A publication Critical patent/JPS5658226A/ja
Publication of JPS6327852B2 publication Critical patent/JPS6327852B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)
JP13457679A 1979-10-17 1979-10-17 Manufacture of semiconductor device Granted JPS5658226A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13457679A JPS5658226A (en) 1979-10-17 1979-10-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13457679A JPS5658226A (en) 1979-10-17 1979-10-17 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5658226A true JPS5658226A (en) 1981-05-21
JPS6327852B2 JPS6327852B2 (enrdf_load_stackoverflow) 1988-06-06

Family

ID=15131577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13457679A Granted JPS5658226A (en) 1979-10-17 1979-10-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5658226A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5861643A (ja) * 1981-09-18 1983-04-12 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 半導体装置の製造方法
JPS58147130A (ja) * 1982-02-26 1983-09-01 Fujitsu Ltd 半導体装置の製造方法
JPS6155938A (ja) * 1984-08-27 1986-03-20 Yokogawa Hokushin Electric Corp 電子素子の分離法
JPH027436A (ja) * 1988-06-24 1990-01-11 Sony Corp 半導体装置の製造方法
JPH0678435U (ja) * 1993-01-27 1994-11-04 川鉄テクノコンストラクション株式会社 鉄筋交差部の結合金物
EP1047131A1 (en) * 1999-04-19 2000-10-25 TriQuint Semiconductor, Inc. Electrostatic discharge protection device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS=1979 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5861643A (ja) * 1981-09-18 1983-04-12 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 半導体装置の製造方法
JPS58147130A (ja) * 1982-02-26 1983-09-01 Fujitsu Ltd 半導体装置の製造方法
JPS6155938A (ja) * 1984-08-27 1986-03-20 Yokogawa Hokushin Electric Corp 電子素子の分離法
JPH027436A (ja) * 1988-06-24 1990-01-11 Sony Corp 半導体装置の製造方法
JPH0678435U (ja) * 1993-01-27 1994-11-04 川鉄テクノコンストラクション株式会社 鉄筋交差部の結合金物
EP1047131A1 (en) * 1999-04-19 2000-10-25 TriQuint Semiconductor, Inc. Electrostatic discharge protection device
US6265756B1 (en) 1999-04-19 2001-07-24 Triquint Semiconductor, Inc. Electrostatic discharge protection device

Also Published As

Publication number Publication date
JPS6327852B2 (enrdf_load_stackoverflow) 1988-06-06

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