JPS5654070A - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device

Info

Publication number
JPS5654070A
JPS5654070A JP12920679A JP12920679A JPS5654070A JP S5654070 A JPS5654070 A JP S5654070A JP 12920679 A JP12920679 A JP 12920679A JP 12920679 A JP12920679 A JP 12920679A JP S5654070 A JPS5654070 A JP S5654070A
Authority
JP
Japan
Prior art keywords
film
gate
drain region
source
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12920679A
Other languages
English (en)
Inventor
Kazuo Terada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12920679A priority Critical patent/JPS5654070A/ja
Publication of JPS5654070A publication Critical patent/JPS5654070A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
JP12920679A 1979-10-05 1979-10-05 Method of manufacturing semiconductor device Pending JPS5654070A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12920679A JPS5654070A (en) 1979-10-05 1979-10-05 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12920679A JPS5654070A (en) 1979-10-05 1979-10-05 Method of manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JPS5654070A true JPS5654070A (en) 1981-05-13

Family

ID=15003752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12920679A Pending JPS5654070A (en) 1979-10-05 1979-10-05 Method of manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5654070A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63212433A (ja) * 1987-02-27 1988-09-05 Miyano:Kk 加工機械における加工物供給搬出装置
JPS63212434A (ja) * 1987-02-27 1988-09-05 Miyano:Kk 加工機械における加工物搬送装置
US5637411A (en) * 1991-07-29 1997-06-10 Hitachi Maxell, Ltd. Magneto-optical recording medium and process for producing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63212433A (ja) * 1987-02-27 1988-09-05 Miyano:Kk 加工機械における加工物供給搬出装置
JPS63212434A (ja) * 1987-02-27 1988-09-05 Miyano:Kk 加工機械における加工物搬送装置
US5637411A (en) * 1991-07-29 1997-06-10 Hitachi Maxell, Ltd. Magneto-optical recording medium and process for producing the same

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