JPS5650537A - Formation of multilayered wiring for semiconductor device - Google Patents
Formation of multilayered wiring for semiconductor deviceInfo
- Publication number
- JPS5650537A JPS5650537A JP12753879A JP12753879A JPS5650537A JP S5650537 A JPS5650537 A JP S5650537A JP 12753879 A JP12753879 A JP 12753879A JP 12753879 A JP12753879 A JP 12753879A JP S5650537 A JPS5650537 A JP S5650537A
- Authority
- JP
- Japan
- Prior art keywords
- film
- interlayer insulating
- insulating film
- lower wiring
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent the corrosion of the lower wiring layer in the case multilayered wirings of two or more layers are formed, by depositing a metal film which can withstand etching liquid for an interlayer insulating film on the boundary surface between the lower wiring film and the interlayer insulating film. CONSTITUTION:An oxide insulating film 3 having a hole on an impurity region 2 is formed on a silicon substrate 1. Then, an aluminum film is deposited, and the first lower wiring film 4 is formed. On said film 4, is deposited a metal 5 such as chromium, molybdenum, tungsten, titanium, and the like which can withstand the etching liquid for the interlayer insulating film 6. Then, an SiO2 film which is to become the interlayer insulating film 6 by a reactive sputtering method or a CVD method, and an opening 7 for a through hole is provided at a desired region by a normal method. Finally, an aluminum film 8 which is to become the second wiring metal film is deposited. In this constitution, the lower wiring film 4 is not corroded by fluoric acid which is the etching liquid for the SiO2 film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12753879A JPS5650537A (en) | 1979-10-01 | 1979-10-01 | Formation of multilayered wiring for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12753879A JPS5650537A (en) | 1979-10-01 | 1979-10-01 | Formation of multilayered wiring for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5650537A true JPS5650537A (en) | 1981-05-07 |
Family
ID=14962483
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12753879A Pending JPS5650537A (en) | 1979-10-01 | 1979-10-01 | Formation of multilayered wiring for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5650537A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61159750A (en) * | 1984-12-31 | 1986-07-19 | Sony Corp | Semiconductor device and manufacture thereof |
US6836299B2 (en) * | 2001-02-12 | 2004-12-28 | Samsung Electronics Co., Ltd. | TFT LCD device having multi-layered pixel electrodes |
-
1979
- 1979-10-01 JP JP12753879A patent/JPS5650537A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61159750A (en) * | 1984-12-31 | 1986-07-19 | Sony Corp | Semiconductor device and manufacture thereof |
US6836299B2 (en) * | 2001-02-12 | 2004-12-28 | Samsung Electronics Co., Ltd. | TFT LCD device having multi-layered pixel electrodes |
USRE41927E1 (en) * | 2001-02-12 | 2010-11-16 | Samsung Electronics Co., Ltd. | TFT LCD device having multi-layered pixel electrodes |
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