JPS5645897A - Manufacture of silicon carbide crystal - Google Patents

Manufacture of silicon carbide crystal

Info

Publication number
JPS5645897A
JPS5645897A JP12127979A JP12127979A JPS5645897A JP S5645897 A JPS5645897 A JP S5645897A JP 12127979 A JP12127979 A JP 12127979A JP 12127979 A JP12127979 A JP 12127979A JP S5645897 A JPS5645897 A JP S5645897A
Authority
JP
Japan
Prior art keywords
layer
substrate
sic
stand
temp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12127979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6121197B2 (enrdf_load_stackoverflow
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP12127979A priority Critical patent/JPS5645897A/ja
Priority to DE3002671A priority patent/DE3002671C2/de
Publication of JPS5645897A publication Critical patent/JPS5645897A/ja
Priority to US06/369,911 priority patent/US4582561A/en
Publication of JPS6121197B2 publication Critical patent/JPS6121197B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP12127979A 1979-01-25 1979-09-19 Manufacture of silicon carbide crystal Granted JPS5645897A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP12127979A JPS5645897A (en) 1979-09-19 1979-09-19 Manufacture of silicon carbide crystal
DE3002671A DE3002671C2 (de) 1979-01-25 1980-01-25 Verfahren zur Herstellung eines Siliciumcarbidsubstrats
US06/369,911 US4582561A (en) 1979-01-25 1982-04-19 Method for making a silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12127979A JPS5645897A (en) 1979-09-19 1979-09-19 Manufacture of silicon carbide crystal

Publications (2)

Publication Number Publication Date
JPS5645897A true JPS5645897A (en) 1981-04-25
JPS6121197B2 JPS6121197B2 (enrdf_load_stackoverflow) 1986-05-26

Family

ID=14807313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12127979A Granted JPS5645897A (en) 1979-01-25 1979-09-19 Manufacture of silicon carbide crystal

Country Status (1)

Country Link
JP (1) JPS5645897A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283014A (ja) * 1987-04-28 1988-11-18 Sharp Corp 炭化珪素半導体素子
US5471946A (en) * 1992-10-13 1995-12-05 Cs Halbleiter-Und Solartechnologie Gmbh Method for producing a wafer with a monocrystalline silicon carbide layer
JP2002530266A (ja) * 1998-11-25 2002-09-17 サントル、ナショナール、ド、ラ、ルシェルシュ、シアンティフィク、（セーエヌエルエス） 基板上に結晶成長させる方法
WO2018180013A1 (ja) * 2017-03-28 2018-10-04 三菱電機株式会社 炭化珪素基板、炭化珪素基板の製造方法、および炭化珪素半導体装置の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283014A (ja) * 1987-04-28 1988-11-18 Sharp Corp 炭化珪素半導体素子
US5471946A (en) * 1992-10-13 1995-12-05 Cs Halbleiter-Und Solartechnologie Gmbh Method for producing a wafer with a monocrystalline silicon carbide layer
JP2002530266A (ja) * 1998-11-25 2002-09-17 サントル、ナショナール、ド、ラ、ルシェルシュ、シアンティフィク、（セーエヌエルエス） 基板上に結晶成長させる方法
WO2018180013A1 (ja) * 2017-03-28 2018-10-04 三菱電機株式会社 炭化珪素基板、炭化珪素基板の製造方法、および炭化珪素半導体装置の製造方法
JPWO2018180013A1 (ja) * 2017-03-28 2019-11-07 三菱電機株式会社 炭化珪素基板、炭化珪素基板の製造方法、および炭化珪素半導体装置の製造方法
CN110462112A (zh) * 2017-03-28 2019-11-15 三菱电机株式会社 碳化硅基板、碳化硅基板的制造方法及碳化硅半导体装置的制造方法

Also Published As

Publication number Publication date
JPS6121197B2 (enrdf_load_stackoverflow) 1986-05-26

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