JPS564230A - Etching apparatus utilizing microwave plasma - Google Patents
Etching apparatus utilizing microwave plasmaInfo
- Publication number
- JPS564230A JPS564230A JP6579079A JP6579079A JPS564230A JP S564230 A JPS564230 A JP S564230A JP 6579079 A JP6579079 A JP 6579079A JP 6579079 A JP6579079 A JP 6579079A JP S564230 A JPS564230 A JP S564230A
- Authority
- JP
- Japan
- Prior art keywords
- tube
- plasma
- reacting
- reacting tube
- flange
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain a microwave plasma etching apparatus by eliminating the product struck to the inner wall of a reacting tube without removing the reacting tube from the apparatus and eliminating adverse effects especially on the flange surface at the time of removal. CONSTITUTION:A plasma discharge end 4b of a tube 4 is inserted into a reacting tube 1, and a flange 9 is engaged with a flange 1d of said reacting tube, and sealing is made. The pressure is decreased, etching gas is introduced, a microwae is applied 5 to a plasma generating ortion 4c of said tube 4, and plasma 11 is introduced into the reacting tube 1 and discharged. The plasma 11 etches out the product 3 on the wall of the reacting tube. Since the plasma is generated especially by the microwave, the plasama acts on the product more positively than on the reacting tube itself, and the adverse effects such as the etching of the flange surface or the inner wall of the reacting tube can be avoided. After the product 3 has completely etched out in several minutes by the plasma 11, the plasma generation is stopped, N2 for leak is introduced 1e, exhaustion 1b' is stopped, the pressure in the reactive tube is returned to normal, and the flange 9 is separated from the reacting tube 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6579079A JPS564230A (en) | 1979-05-28 | 1979-05-28 | Etching apparatus utilizing microwave plasma |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6579079A JPS564230A (en) | 1979-05-28 | 1979-05-28 | Etching apparatus utilizing microwave plasma |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS564230A true JPS564230A (en) | 1981-01-17 |
Family
ID=13297169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6579079A Pending JPS564230A (en) | 1979-05-28 | 1979-05-28 | Etching apparatus utilizing microwave plasma |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS564230A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59166343U (en) * | 1983-04-22 | 1984-11-07 | オムロン株式会社 | polarized relay |
-
1979
- 1979-05-28 JP JP6579079A patent/JPS564230A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59166343U (en) * | 1983-04-22 | 1984-11-07 | オムロン株式会社 | polarized relay |
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