JPS5637643A - Manufacturing of semiconductor integrated circuit - Google Patents
Manufacturing of semiconductor integrated circuitInfo
- Publication number
- JPS5637643A JPS5637643A JP11279079A JP11279079A JPS5637643A JP S5637643 A JPS5637643 A JP S5637643A JP 11279079 A JP11279079 A JP 11279079A JP 11279079 A JP11279079 A JP 11279079A JP S5637643 A JPS5637643 A JP S5637643A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sio2
- si3n4
- psg
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 2
- 108010044665 pregnancy-specific beta-1-glycoprotein 12 Proteins 0.000 abstract 2
- 238000000926 separation method Methods 0.000 abstract 2
- 230000000873 masking effect Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229920001721 polyimide Polymers 0.000 abstract 1
- 239000009719 polyimide resin Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11279079A JPS5637643A (en) | 1979-09-05 | 1979-09-05 | Manufacturing of semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11279079A JPS5637643A (en) | 1979-09-05 | 1979-09-05 | Manufacturing of semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5637643A true JPS5637643A (en) | 1981-04-11 |
JPS6257108B2 JPS6257108B2 (enrdf_load_stackoverflow) | 1987-11-30 |
Family
ID=14595574
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11279079A Granted JPS5637643A (en) | 1979-09-05 | 1979-09-05 | Manufacturing of semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5637643A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5843572A (ja) * | 1981-09-09 | 1983-03-14 | Nec Corp | 半導体装置の製造方法 |
-
1979
- 1979-09-05 JP JP11279079A patent/JPS5637643A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5843572A (ja) * | 1981-09-09 | 1983-03-14 | Nec Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6257108B2 (enrdf_load_stackoverflow) | 1987-11-30 |
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